Найдено: 6
Наименование Описание Производитель
Package / Case
Вид монтажа
Длина волны
Активная площадь
Тип диода
Рабочая температура
Response Time
Обратное постоянное напряжение (Vr) (Max)
Color - Enhanced
Responsivity @ nm
Current - Dark (Typ)
NJL6402R-2-TE1 COBP PHOTO DIODE FOR FRONT MONIT Nisshinbo Micro Devices Inc. 2-SMD, No Lead Surface Mount 800nm 1mm² PIN -30°C ~ 85°C 2ns 35V Infrared(NIR)/Blue 0.47 A/W @ 780nm, 0.42 A/W @ 650nm 100pA
NJL6414R-TE1 PHOTO DIODE Nisshinbo Micro Devices Inc. 2-SMD, No Lead Surface Mount 900nm 2.25mm² -30°C ~ 85°C 16ns, 22ns 35V 0.27 A/W @ 405nm, 0.47 A/W @ 780nm 500pA
NJL6407R-TE1 HIGH SPEED PHOTO DIODE Nisshinbo Micro Devices Inc. 2-SMD, No Lead Surface Mount 800nm 2.16mm² -30°C ~ 80°C 9ns 35V Infrared(NIR)/Blue 0.47 A/W @ 780nm, 0.42 A/W @ 650nm 100pA
NJL6401R-3-TE1 COBP HIGH SPEED PHOTO DIODE Nisshinbo Micro Devices Inc. 2-SMD, No Lead Surface Mount 800nm 0.49mm² PIN -30°C ~ 85°C 2ns 35V Infrared(NIR)/Blue 0.47 A/W @ 780nm, 0.42 A/W @ 650nm 100pA
NJL6195R-TE1 PHOTO DIODE Nisshinbo Micro Devices Inc. 2-SMD, No Lead Surface Mount 890nm 2.98mm² -30°C ~ 85°C 25ns, 42ns 35V 0.55 A/W @ 850nm 1nA
NJL6195R-W-TE1 PHOTO DIODE Nisshinbo Micro Devices Inc. 2-SMD, No Lead Surface Mount 890nm 8.79mm² -30°C ~ 85°C 25ns, 42ns 35V 0.55 A/W @ 850nm 1nA