- Производитель
- Зона чувствительности
-
- Рабочая температура
- Тип корпуса
- Ток питания
- Управляющий выход
- Принцип действия
- Cable Length
- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Current - DC Forward (If) (Max)
- Response Time
- Степень защиты
- Тип диода
- Мощность - Макс.
- Adjustment Type
- Voltage - Max
- Orientation
- Proximity Detection
- Rise Time (Typ)
- B.P.F. номинальная частота
- Voltage - Output Difference (Typ) @ Distance
- Угол обзора
- Light Source
- Voltage - Output (Typ) @ Distance
- Connection Method
- Обратное постоянное напряжение (Vr) (Max)
- Sensing Object
- Color - Enhanced
- Current - Dark (Id) (Max)
- Fall Time (Typ)
- Cell Resistance (Min) @ Dark
- Cell Resistance @ Illuminance
- Spectral Range
- Responsivity @ nm
- Current - Dark (Typ)
- Активная площадь
- Sensing Light
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип
|
Вид монтажа
|
Тип выхода
|
Напряжение питания
|
Длина волны
|
Рабочая температура
|
Тип корпуса
|
Тип диода
|
Proximity Detection
|
Обратное постоянное напряжение (Vr) (Max)
|
Spectral Range
|
Responsivity @ nm
|
Current - Dark (Typ)
|
Активная площадь
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| KPDE086S-H54P-B | INGAAS, INAS PHOTODIODE W/THEMO- | CEL | TO-39 | Through Hole | -40°C ~ 70°C | 20V | 900nm ~ 1700nm | 0.9 A/W @ 1310nm, 1 A/W @ 1550nm | 1nA | 0.86mm² | |||||||
| KPDA020P-H8-B | SI APD AVALANCHE PHOTODIODE 200U | CEL | TO-206AA, TO-18-3 Metal Can | Through Hole | 780nm | -40°C ~ 85°C | Avalanche | 200V | 400nm ~ 1000nm | 0.45 A/W @ 850nm | 10pA | 0.2mm Dia | |||||
| PH5553A2NA1-Y-A | SENSOR OPT 550NM AMBIENT 6SON | CEL | 6-UFDFN | Ambient | Surface Mount | I²C | 2.4V ~ 3.6V | 550nm | -30°C ~ 85°C | 6-SON | No | ||||||
| PH5504A2NA1-Y-A | SENSOR OPT 530NM AMBIENT 6SON | CEL | 6-UFDFN | Ambient | Surface Mount | Current | 1.8V ~ 5.5V | 530nm | -30°C ~ 85°C | 6-SON (2.55x1.56) | No | ||||||
| KPDA050P-H8-B | SI APD AVALANCHE PHOTODIODE 500U | CEL | TO-206AA, TO-18-3 Metal Can | Through Hole | 780nm | -40°C ~ 85°C | Avalanche | 200V | 400nm ~ 1000nm | 0.45 A/W @ 850nm | 20pA | 0.5mm Dia | |||||
| KPDE300-H53-B | INGAAS PHOTODIODE 3000UM 900-17 | CEL | TO-205AD, TO-39-3 Metal Can | Through Hole | -20°C ~ 70°C | 2V | 900nm ~ 1700nm | 0.9 A/W @ 1310nm, 1 A/W @ 1550nm | 2nA | 3.00mm Dia | |||||||
| PH5503A2NA1-Y-A | SENSOR OPT 555NM AMBIENT 6SON | CEL | 6-UFDFN | Ambient | Surface Mount | Current | 1.8V ~ 5.5V | 555nm | -30°C ~ 85°C | 6-SON (2.55x1.56) | No | ||||||
| KPDEA005-56F-B | INGAAS APD 55UM 900-1700NM | CEL | TO-56-3 Lens Top Metal Can | Through Hole | -40°C ~ 85°C | Avalanche | 55V | 900nm ~ 1700nm | 0.95 A/W @ 1310nm, 1.05 A/W @ 1550nm | 10nA | 0.06mm Dia | ||||||
| KPDE086S-H8-B | INGAAS PHOTODIODE 860X860UM 900- | CEL | TO-206AA, TO-18-3 Metal Can | Through Hole | -40°C ~ 85°C | 20V | 900nm ~ 1700nm | 0.9 A/W @ 1310nm, 1 A/W @ 1550nm | 1nA | 0.86mm² | |||||||
| PH5503A2NA1-E4-Y-A | SENSOR OPT 555NM AMBIENT 6SON | CEL | 6-UFDFN | Ambient | Surface Mount | Current | 1.8V ~ 5.5V | 555nm | -30°C ~ 85°C | 6-SON (2.55x1.56) | No | ||||||
| PH5502B2NA1-Y-A | SENSOR OPT 555NM AMBIENT 6SON | CEL | 6-SMD, Flat Leads | Ambient | Surface Mount | Current | 1.8V ~ 5.5V | 555nm | -30°C ~ 85°C | 6-SON (2.55x1.56) | No | ||||||
| KPDE030-H8-B | INGAAS PHOTODIODE 300UM 900-170 | CEL | TO-206AA, TO-18-3 Metal Can | Through Hole | -40°C ~ 85°C | 20V | 400nm ~ 1700nm | 0.9 A/W @ 1310nm, 1 A/W @ 1550nm | 100pA | 300µm Dia | |||||||
| PH5504A2NA1-E4-Y-A | SENSOR OPT 530NM AMBIENT 6SON | CEL | 6-UFDFN | Ambient | Surface Mount | Current | 1.8V ~ 5.5V | 530nm | -30°C ~ 85°C | 6-SON (2.55x1.56) | No | ||||||
| KPDS100-H54PS-B | INGAAS, INAS PD W/LONG CUTOFF WA | CEL | TO-39 | Through Hole | 3300nm | -40°C ~ 60°C | 500 mV | 1.2 A/W @ 3300nm | 1.00mm Dia | ||||||||
| KPMC29-B | INGAAS PHOTODIODE 2.2X2.2MM SI; | CEL | 4-SMD, No Lead | Surface Mount | -20°C ~ 80°C | 10V | 400nm ~ 1700nm | 0.6 A/W @ 850nm, 0.8 A/W @ 1310nm | 2nA |
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