• Тип канала
    • Напряжение сток-исток (Vdss)
    • Входная емкость (Ciss) (Max) @ Vds
    • Ток стока @ Vds (Vgs=0)
    • Напряжение отсечки (VGS off) @ Id
    • Сопротивление канала (On)
    • Серия
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Списком Таблицей
Найдено: 12
Наименование Описание Производитель
Package / Case
Напряжение пробоя затвора (V(BR)GSS)
Мощность - Макс.
Вид монтажа
Рабочая температура
Тип корпуса
Тип канала
Напряжение сток-исток (Vdss)
Входная емкость (Ciss) (Max) @ Vds
Ток стока @ Vds (Vgs=0)
Напряжение отсечки (VGS off) @ Id
Сопротивление канала (On)
J110,126 JFET N-CH 25V 0.4W SOT54 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 25V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 25V 30pF @ 0V 10mA @ 5V 4V @ 1µA 18 Ohms
J111,126 JFET N-CH 40V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 40V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 40V 6pF @ 10V (VGS) 20mA @ 15V 10V @ 1µA 30 Ohms
J112,126 JFET N-CH 40V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 40V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 40V 6pF @ 10V (VGS) 5mA @ 15V 1V @ 1µA 50 Ohms
J177,126 JFET P-CH 30V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 400mW Through Hole 150°C (TJ) TO-92-3 P-Channel 30V 8pF @ 10V (VGS) 1.5mA @ 15V 800mV @ 10nA 300 Ohms
J113,126 JFET N-CH 40V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 40V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 40V 6pF @ 10V (VGS) 2mA @ 15V 500mV @ 1µA 100 Ohms
J174,126 JFET P-CH 30V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 400mW Through Hole 150°C (TJ) TO-92-3 P-Channel 30V 8pF @ 10V (VGS) 20mA @ 15V 5V @ 10nA 85 Ohms
J175,116 JFET P-CH 30V 0.4W TO92 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 400mW Through Hole 150°C (TJ) TO-92-3 P-Channel 30V 8pF @ 10V (VGS) 7mA @ 15V 3V @ 10nA 125 Ohms
J176,126 JFET P-CH 30V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 400mW Through Hole 150°C (TJ) TO-92-3 P-Channel 30V 8pF @ 10V (VGS) 2mA @ 15V 1V @ 10nA 250 Ohms
J109,126 JFET N-CH 25V 0.4W SOT54 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 25V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 25V 30pF @ 10V (VGS) 80mA @ 15V 2V @ 1µA 12 Ohms
J108,126 JFET N-CH 25V 0.4W SOT54 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 25V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 25V 30pF @ 0V 80mA @ 5V 10V @ 1µA 8 Ohms
J111,126 JFET N-CH 40V 400MW TO92-3 Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 40V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 40V 6pF @ 10V (VGS) 20mA @ 15V 10V @ 1µA 30 Ohms
J112,126 SMALL SIGNAL N-CHANNEL MOSFET Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 40V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 40V 6pF @ 10V (VGS) 5mA @ 15V 1V @ 1µA 50 Ohms
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