- Мощность - Макс.
- Производитель
- Напряжение пробоя затвора (V(BR)GSS)
- Ток стока макс (Id)
- Тип корпуса
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- Тип канала
- Напряжение сток-исток (Vdss)
- Входная емкость (Ciss) (Max) @ Vds
- Ток стока @ Vds (Vgs=0)
- Напряжение отсечки (VGS off) @ Id
- Сопротивление канала (On)
- Серия
Наименование | Описание | Производитель
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Package / Case
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Напряжение пробоя затвора (V(BR)GSS)
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Мощность - Макс.
|
Ток стока макс (Id)
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Вид монтажа
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Рабочая температура
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Тип корпуса
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Тип канала
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Напряжение сток-исток (Vdss)
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Входная емкость (Ciss) (Max) @ Vds
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Ток стока @ Vds (Vgs=0)
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Напряжение отсечки (VGS off) @ Id
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Сопротивление канала (On)
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Серия
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J270 | SMALL SIGNAL P-CHANNEL MOSFET | Fairchild Semiconductor | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 2mA @ 15V | 500mV @ 1nA | |||||
P1087_D74Z | JFET P-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 45pF @ 15V | 5mA @ 20V | 5V @ 1µA | 150 Ohms | |||
MMBF4393 | JFET N-CH 30V 350MW SOT23 | onsemi | TO-236-3, SC-59, SOT-23-3 | 30V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 30V | 14pF @ 20V | 5mA @ 20V | 500mV @ 1nA | 100 Ohms | ||
2N5460_L99Z | IC AMP GP P-CHAN 40V 10MA TO-92 | onsemi | TO-226-3, TO-92-3 Long Body | 40V | 350mW | Through Hole | -65°C ~ 135°C (TJ) | TO-92 (TO-226) | P-Channel | 7pF @ 15V | 5mA @ 15V | 750mV @ 1µA | ||||
2N5460_D27Z | JFET P-CH 40V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 7pF @ 15V | 1mA @ 15V | 750mV @ 1µA | ||||
2N5462_D27Z | JFET P-CH 40V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 7pF @ 15V | 4mA @ 15V | 1.8V @ 1µA | ||||
2N5638_D26Z | JFET N-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30V | 10pF @ 12V (VGS) | 50mA @ 20V | 30 Ohms | |||
J112RLRAG | JFET N-CH 35V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 Long Body (Formed Leads) | 35V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92 (TO-226) | N-Channel | 5mA @ 15V | 1V @ 1µA | 50 Ohms | ||||
J112RL1 | JFET N-CH 35V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 Long Body (Formed Leads) | 35V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92 (TO-226) | N-Channel | 5mA @ 15V | 1V @ 1µA | 50 Ohms | ||||
J176-D74Z | JFET P-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 2mA @ 15V | 1V @ 10nA | 250 Ohms | ||||
PN5432_D27Z | JFET N-CH 25V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 25V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30pF @ 10V (VGS) | 150mA @ 15V | 4V @ 3nA | 5 Ohms | |||
J270_D26Z | JFET P-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 2mA @ 15V | 500mV @ 1nA | |||||
J111RLRAG | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 20mA @ 15V | 3V @ 1µA | 30 Ohms | ||||
J176 | SMALL SIGNAL P-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 2mA @ 15V | 1V @ 10nA | 250 Ohms | ||||
SST5485-E3 | JFET P-CH 35V 4MA SOT-23 | Vishay Siliconix | TO-236-3, SC-59, SOT-23-3 | 25V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23 | N-Channel | 5pF @ 15V | 4mA @ 15V | 500mV @ 10nA |
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