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Списком Таблицей
Найдено: 185
Наименование Описание Производитель
Package / Case
Напряжение пробоя затвора (V(BR)GSS)
Мощность - Макс.
Ток стока макс (Id)
Вид монтажа
Рабочая температура
Тип корпуса
Тип канала
Напряжение сток-исток (Vdss)
Входная емкость (Ciss) (Max) @ Vds
Ток стока @ Vds (Vgs=0)
Напряжение отсечки (VGS off) @ Id
Сопротивление канала (On)
Серия
CMPFJ175 TR IC JFET P-CH SOT23-3 Central Semiconductor Corp TO-236-3, SC-59, SOT-23-3 30V 350mW Surface Mount -65°C ~ 150°C (TJ) SOT-23 P-Channel 7mA @ 15V 3V @ 10nA 125 Ohms
PN5434 JFET N-CH 25V 0.35W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) 25V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 N-Channel 30pF @ 10V (VGS) 30mA @ 15V 1V @ 3nA 10 Ohms
J177_D75Z JFET P-CH 30V 0.35W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 P-Channel 1.5mA @ 15V 800mV @ 10nA 300 Ohms
2N5461_D26Z JFET P-CH 40V 0.35W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 40V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 P-Channel 7pF @ 15V 2mA @ 15V 1V @ 1µA
PN4118 JFET N-CH 40V 0.35W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) 40V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 N-Channel 3pF @ 10V 80µA @ 10V 1V @ 1nA
2N5639_D75Z JFET N-CH 30V 0.35W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 N-Channel 30V 10pF @ 12V (VGS) 25mA @ 20V 60 Ohms
TIS74_J35Z JFET N-CH 30V 0.35W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 350mW Through Hole TO-92-3 N-Channel 18pF @ 10V (VGS) 20mA @ 15V 2V @ 4nA 40 Ohms
2N5638 JFET N-CH 30V 0.35W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) 30V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 N-Channel 30V 10pF @ 12V (VGS) 50mA @ 20V 30 Ohms
MPF4393G JFET N-CH 30V 0.35W TO92 onsemi TO-226-3, TO-92-3 Long Body 30V 350mW Through Hole -65°C ~ 150°C (TJ) TO-92 (TO-226) N-Channel 30V 10pF @ 15V (VGS) 5mA @ 15V 500mV @ 10nA 100 Ohms
2N5639_D26Z JFET N-CH 30V 0.35W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 N-Channel 30V 10pF @ 12V (VGS) 25mA @ 20V 60 Ohms
J174_D75Z JFET P-CH 30V 0.35W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 P-Channel 20mA @ 15V 5V @ 10nA 85 Ohms
MMBFJ201_G INTEGRATED CIRCUIT onsemi TO-236-3, SC-59, SOT-23-3 40V 350mW Surface Mount -55°C ~ 150°C (TJ) SOT-23-3 N-Channel 200µA @ 20V 300mV @ 10nA
J112RLRAG SMALL SIGNAL N-CHANNEL MOSFET Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 35V 350mW Through Hole -65°C ~ 150°C (TJ) TO-92-3 N-Channel 5mA @ 15V 1V @ 1µA 50 Ohms
SST4119-T1-E3 JFET N-CH 70V 200UA SOT-23 Vishay Siliconix TO-236-3, SC-59, SOT-23-3 40V 350mW Surface Mount -55°C ~ 175°C (TJ) TO-236 N-Channel 3pF @ 10V 200µA @ 10V 2V @ 1nA
SST201-T1-E3 JFET N-CH 25V .7MA SOT-23 Vishay Siliconix TO-236-3, SC-59, SOT-23-3 40V 350mW Surface Mount -55°C ~ 150°C (TJ) SOT-23 N-Channel 4.5pF @ 15V 200µA @ 15V 300mV @ 10nA
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