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Списком Таблицей
Найдено: 10
Наименование Описание Производитель
Package / Case
Напряжение пробоя затвора (V(BR)GSS)
Мощность - Макс.
Ток стока макс (Id)
Вид монтажа
Рабочая температура
Тип корпуса
Тип канала
Напряжение сток-исток (Vdss)
Входная емкость (Ciss) (Max) @ Vds
Ток стока @ Vds (Vgs=0)
Напряжение отсечки (VGS off) @ Id
TF410-TL-H JFET N-CH 1MA 30MW USFP onsemi 3-SMD, Flat Lead 40V 30mW 1 mA Surface Mount 150°C (TJ) 3-USFP N-Channel 40V 0.7pF @ 10V 50µA @ 10V 4V @ 1µA
TF252-4-TL-H JFET N-CH 1MA 30MW USFP onsemi SOT-1123 30mW 1 mA Surface Mount 150°C (TJ) 3-USFP N-Channel 3.1pF @ 2V 140µA @ 2V 100mV @ 1µA
TF256-3-TL-H JFET N-CH 1MA 30MW USFP onsemi SOT-1123 30mW 1 mA Surface Mount 150°C (TJ) 3-USFP N-Channel 3.1pF @ 2V 100µA @ 2V 100mV @ 1µA
TF408-3-TL-H JFET N-CH 10MA 30MW USFP onsemi 3-SMD, Flat Lead 30mW 10 mA Surface Mount 150°C (TJ) 3-USFP N-Channel 4pF @ 10V 1.2mA @ 10V 180mV @ 1µA
TF408-2-TL-H JFET N-CH 10MA 30MW USFP onsemi 3-SMD, Flat Lead 30mW 10 mA Surface Mount 150°C (TJ) 3-USFP N-Channel 4pF @ 10V 600µA @ 10V 180mV @ 1µA
TF256-5-TL-H JFET N-CH 1MA 30MW USFP onsemi SOT-1123 30mW 1 mA Surface Mount 150°C (TJ) 3-USFP N-Channel 3.1pF @ 2V 240µA @ 2V 100mV @ 1µA
TF256-4-TL-H JFET N-CH 1MA 30MW USFP onsemi SOT-1123 30mW 1 mA Surface Mount 150°C (TJ) 3-USFP N-Channel 3.1pF @ 2V 140µA @ 2V 100mV @ 1µA
TF252-5-TL-H JFET N-CH 1MA 30MW USFP onsemi SOT-1123 30mW 1 mA Surface Mount 150°C (TJ) 3-USFP N-Channel 3.1pF @ 2V 210µA @ 2V 100mV @ 1µA
TF408-3-TL-H SMALL SIGNAL FET Rochester Electronics, LLC 3-SMD, Flat Lead 30mW Surface Mount 150°C (TJ) 3-USFP N-Channel 4pF @ 10V 1.2mA @ 10V 180mV @ 1µA
TF252-4-TL-H SMALL SIGNAL FET Rochester Electronics, LLC 3-SMD, Flat Lead 30mW Surface Mount 150°C (TJ) 3-USFP N-Channel 3.1pF @ 2V 140µA @ 2V 100mV @ 1µA
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