Найдено: 74
Наименование Описание Производитель
Package / Case
Напряжение пробоя затвора (V(BR)GSS)
Мощность - Макс.
Ток стока макс (Id)
Вид монтажа
Рабочая температура
Тип корпуса
Тип канала
Напряжение сток-исток (Vdss)
Входная емкость (Ciss) (Max) @ Vds
Ток стока @ Vds (Vgs=0)
Напряжение отсечки (VGS off) @ Id
Сопротивление канала (On)
Серия
SST4416 SOT-23 3L WIDEBAND, HIGH GAIN, SINGLE, N- Linear Integrated Systems, Inc. TO-236-3, SC-59, SOT-23-3 30V 300mW Surface Mount -55°C ~ 135°C (TJ) SOT-23-3 N-Channel 0.8pF @ 15V SST4416
SST4117 SOT-23 3L ULTRA HIGH INPUT IMPEDANCE N-CHA Linear Integrated Systems, Inc. TO-236-3, SC-59, SOT-23-3 40V 300mW Surface Mount SOT-23-3 N-Channel 3pF @ 10V SST4117
PN4416 TO-92 3L WIDEBAND, HIGH GAIN, SINGLE, N- Linear Integrated Systems, Inc. TO-226-3, TO-92-3 (TO-226AA) 30V 300mW Through Hole -55°C ~ 135°C (TJ) TO-92 N-Channel 0.8pF @ 15V PN4416
2N3821 N CHANNEL JFET Microchip Technology TO-206AF, TO-72-4 Metal Can 50V 300mW Through Hole -55°C ~ 200°C (TJ) TO-72 N-Channel 50V 6pF @ 15V 2.5mA @ 15V 4V @ 0.5nA Military, MIL-PRF-19500/375
2N3823 N CHANNEL JFET Microchip Technology TO-206AF, TO-72-4 Metal Can 30V 300mW Through Hole -55°C ~ 200°C (TJ) TO-72 N-Channel 30V 6pF @ 15V 20mA @ 15V 8V @ 500pA Military, MIL-PRF-19500/375
2N2609 JFETS Microsemi Corporation TO-206AA, TO-18-3 Metal Can 30V 300mW Through Hole -65°C ~ 200°C (TJ) TO-18 (TO-206AA) P-Channel 10pF @ 5V 2mA @ 5V 750mV @ 1A
2SK715W-AC JFET N-CH 50MA 300MW SPA onsemi SC-72 300mW 50 mA Through Hole 125°C (TJ) 3-SPA N-Channel 15V 10pF @ 5V 14.5mA @ 5V 600mV @ 100µA
2SK715U JFET N-CH 50MA 300MW SPA onsemi SC-72 300mW 50 mA Through Hole 125°C (TJ) 3-SPA N-Channel 15V 10pF @ 5V 7.3mA @ 5V 600mV @ 100µA
2SK715U SMALL SIGNAL FET Rochester Electronics, LLC SC-72 300mW Through Hole 125°C (TJ) 3-SPA N-Channel 15V 10pF @ 5V 7.3mA @ 5V 600mV @ 100µA
2SK715U-AC SMALL SIGNAL FET Rochester Electronics, LLC SC-72 300mW Through Hole 125°C (TJ) 3-SPA N-Channel 15V 10pF @ 5V 7.3mA @ 5V 600mV @ 100µA
PMBFJ176,215 SMALL SIGNAL P-CHANNEL MOSFET Rochester Electronics, LLC TO-236-3, SC-59, SOT-23-3 30V 300mW Surface Mount 150°C (TJ) SOT-23 (TO-236AB) P-Channel 30V 8pF @ 10V (VGS) 2mA @ 15V 1V @ 10nA 250 Ohms
2N5432-2 JFET N-CH 25V 0.3W TO-52 Vishay Siliconix TO-206AC, TO-52-3 Metal Can 25V 300mW Through Hole -55°C ~ 150°C (TJ) TO-206AC (TO-52) N-Channel 30pF @ 0V 150mA @ 15V 4V @ 3nA
2N4119A-2 MOSFET N-CH 40V 200UA TO-206AF Vishay Siliconix TO-206AF, TO-72-4 Metal Can 40V 300mW Through Hole -55°C ~ 175°C (TJ) TO-206AF (TO-72) N-Channel 3pF @ 10V 200µA @ 10V 2V @ 1nA
2N5433-E3 JFET N-CH 25V 0.3W TO-52 Vishay Siliconix TO-206AC, TO-52-3 Metal Can 25V 300mW Through Hole -55°C ~ 150°C (TJ) TO-206AC (TO-52) N-Channel 30pF @ 0V 100mA @ 15V 3V @ 3nA
2N4416A-2 MOSFET N-CH 35V 5MA TO-206AF Vishay Siliconix TO-206AF, TO-72-4 Metal Can 35V 300mW Through Hole -50°C ~ 150°C (TJ) TO-206AF (TO-72) N-Channel 4pF @ 15V 5mA @ 15V 2.5V @ 1nA