- Мощность - Макс.
- Производитель
- Напряжение пробоя затвора (V(BR)GSS)
- Ток стока макс (Id)
- Тип корпуса
-
- Тип канала
- Напряжение сток-исток (Vdss)
- Входная емкость (Ciss) (Max) @ Vds
- Ток стока @ Vds (Vgs=0)
- Напряжение отсечки (VGS off) @ Id
- Сопротивление канала (On)
- Серия
Наименование | Описание | Производитель
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Package / Case
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Напряжение пробоя затвора (V(BR)GSS)
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Мощность - Макс.
|
Ток стока макс (Id)
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Вид монтажа
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Рабочая температура
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Тип корпуса
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Тип канала
|
Напряжение сток-исток (Vdss)
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Входная емкость (Ciss) (Max) @ Vds
|
Ток стока @ Vds (Vgs=0)
|
Напряжение отсечки (VGS off) @ Id
|
Сопротивление канала (On)
|
Серия
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2N4416A | JFET N-CH 35V 0.3W TO-72 | Central Semiconductor Corp | TO-206AF, TO-72-4 Metal Can | 35V | 300mW | Through Hole | -65°C ~ 200°C (TJ) | TO-72 | N-Channel | 35V | 4pF @ 15V | 5mA @ 15V | 2.5V @ 1nA | |||
2N2608 | JFET | Microchip Technology | TO-206AA, TO-18-3 Metal Can | 30V | 300mW | Through Hole | -65°C ~ 200°C (TJ) | TO-18 (TO-206AA) | P-Channel | 10pF @ 5V | 1 mA @ 5 V | 750mV @ 1µA | Military, MIL-PRF-19500/295 | |||
JANTX2N4416AUB | JFET N-CH 35V 0.3W 4SMD | Microsemi Corporation | 4-SMD, No Lead | 35V | 300mW | Surface Mount | 4-SMD | N-Channel | 35V | 4pF @ 15V | 15mA @ 15V | 6V @ 1nA | ||||
PMBFJ113,215 | JFET N-CH 40V 0.3W SOT23 | NXP USA Inc. | TO-236-3, SC-59, SOT-23-3 | 40V | 300mW | Surface Mount | 150°C (TJ) | SOT-23 (TO-236AB) | N-Channel | 40V | 6pF @ 10V (VGS) | 2mA @ 15V | 3V @ 1µA | 100 Ohms | ||
PMBFJ112,215 | JFET N-CH 40V 0.3W SOT23 | NXP USA Inc. | TO-236-3, SC-59, SOT-23-3 | 40V | 300mW | Surface Mount | 150°C (TJ) | SOT-23 (TO-236AB) | N-Channel | 40V | 6pF @ 10V (VGS) | 5mA @ 15V | 5V @ 1µA | 50 Ohms | ||
PMBFJ111,215 | JFET N-CH 40V 0.3W SOT23 | NXP USA Inc. | TO-236-3, SC-59, SOT-23-3 | 40V | 300mW | Surface Mount | 150°C (TJ) | SOT-23 (TO-236AB) | N-Channel | 40V | 6pF @ 10V (VGS) | 20mA @ 15V | 10V @ 1µA | 30 Ohms | ||
2SK715W | JFET N-CH 50MA 300MW SPA | onsemi | SC-72 | 300mW | 50 mA | Through Hole | 125°C (TJ) | 3-SPA | N-Channel | 15V | 10pF @ 5V | 14.5mA @ 5V | 600mV @ 100µA | |||
2SK2145-BL(TE85L,F | JFET N-CH 50V SMV | Toshiba Semiconductor and Storage | SC-74A, SOT-753 | 300mW | Surface Mount | 125°C (TJ) | SMV | 2 N-Channel (Dual) | 13pF @ 10V | 6mA @ 10V | 200mV @ 100nA | |||||
2SK2145-Y(TE85L,F) | MOSFET 2N-CH JFET 50V SMV | Toshiba Semiconductor and Storage | SC-74A, SOT-753 | 300mW | Surface Mount | 125°C (TJ) | SMV | 2 N-Channel (Dual) | 13pF @ 10V | 1.2mA @ 10V | 200mV @ 100nA | |||||
2N4416A | MOSFET N-CH 35V 5MA TO-206AF | Vishay Siliconix | TO-206AF, TO-72-4 Metal Can | 35V | 300mW | Through Hole | -50°C ~ 150°C (TJ) | TO-206AF (TO-72) | N-Channel | 4pF @ 15V | 5mA @ 15V | 2.5V @ 1nA | ||||
2N4416A-E3 | MOSFET N-CH 35V 5MA TO-206AF | Vishay Siliconix | TO-206AF, TO-72-4 Metal Can | 35V | 300mW | Through Hole | -50°C ~ 150°C (TJ) | TO-206AF (TO-72) | N-Channel | 4pF @ 15V | 5mA @ 15V | 2.5V @ 1nA | ||||
2N4338-2 | MOSFET N-CH 50V 600UA TO-206AA | Vishay Siliconix | TO-206AA, TO-18-3 Metal Can | 50V | 300mW | Through Hole | -55°C ~ 175°C (TJ) | TO-206AA (TO-18) | N-Channel | 7pF @ 15V | 200µA @ 15V | 300mV @ 100nA | ||||
2N4118A-E3 | MOSFET N-CH 40V 80UA TO-206AF | Vishay Siliconix | TO-206AF, TO-72-4 Metal Can | 40V | 300mW | Through Hole | -55°C ~ 175°C (TJ) | TO-206AF (TO-72) | N-Channel | 3pF @ 10V | 80µA @ 10V | 1V @ 1nA | ||||
2N4118A | MOSFET N-CH 40V 80UA TO-206AF | Vishay Siliconix | TO-206AF, TO-72-4 Metal Can | 40V | 300mW | Through Hole | -55°C ~ 175°C (TJ) | TO-206AF (TO-72) | N-Channel | 3pF @ 10V | 80µA @ 10V | 1V @ 1nA | ||||
2N4117A | MOSFET N-CH 40V 30UA TO-206AF | Vishay Siliconix | TO-206AF, TO-72-4 Metal Can | 40V | 300mW | Through Hole | -55°C ~ 175°C (TJ) | TO-206AF (TO-72) | N-Channel | 3pF @ 10V | 30µA @ 10V | 600mV @ 1nA |
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