Найдено: 24
Наименование Описание Производитель
Package / Case
Напряжение пробоя затвора (V(BR)GSS)
Мощность - Макс.
Ток стока макс (Id)
Вид монтажа
Рабочая температура
Тип корпуса
Тип канала
Напряжение сток-исток (Vdss)
Входная емкость (Ciss) (Max) @ Vds
Ток стока @ Vds (Vgs=0)
Напряжение отсечки (VGS off) @ Id
Сопротивление канала (On)
FJN598JBBU JFET N-CH 20V 0.15W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) 20V 150mW 1 mA Through Hole 150°C (TJ) TO-92-3 N-Channel 3.5pF @ 5V 100µA @ 5V 600mV @ 1µA
FJN598JCBU JFET N-CH 20V 0.15W TO92 onsemi TO-226-3, TO-92-3 (TO-226AA) 20V 150mW 1 mA Through Hole 150°C (TJ) TO-92-3 N-Channel 3.5pF @ 5V 100µA @ 5V 600mV @ 1µA
2SK01980RL JFET N-CH 20MA 150MW MINI-3 Panasonic Electronic Components TO-236-3, SC-59, SOT-23-3 150mW 20 mA Surface Mount 150°C (TJ) Mini3-G1 N-Channel 30V 14pF @ 10V 500µA @ 10V 100mV @ 10µA
DSK5J01P0L JFET N-CH 30MA 150MW SMINI3-F2-B Panasonic Electronic Components SC-85 150mW 30 mA Surface Mount 150°C (TJ) SMini3-F2-B N-Channel 55V 6pF @ 10V 1mA @ 10V 5V @ 10µA
2SJ01630RL JFET P-CH 20MA 150MW MINI-3 Panasonic Electronic Components TO-236-3, SC-59, SOT-23-3 150mW 20 mA Surface Mount 150°C (TJ) Mini3-G1 P-Channel 12pF @ 10V 600µA @ 10V 1.5V @ 10µA 300 Ohms
2SK1070PIDTL-E JFET N-CH MPAK Renesas Electronics America TO-236-3, SC-59, SOT-23-3 22V 150mW Surface Mount 150°C 3-MPAK N-Channel 9pF @ 5V 12mA @ 5V 0V @ 10µA
2SK1070PICTL-E JFET N-CH MPAK Renesas Electronics America TO-236-3, SC-59, SOT-23-3 22V 150mW Surface Mount 150°C 3-MPAK N-Channel 9pF @ 5V 12mA @ 5V 0V @ 10µA
2SK1070PIETR-E JFET N-CH MPAK Renesas Electronics America Inc TO-236-3, SC-59, SOT-23-3 22V 150mW 50 mA Surface Mount 150°C 3-MPAK N-Channel 9pF @ 5V 12mA @ 5V 0V @ 10µA
2SK1070PIDTL-E JFET N-CH MPAK Renesas Electronics America Inc TO-236-3, SC-59, SOT-23-3 22V 150mW 50 mA Surface Mount 150°C 3-MPAK N-Channel 9pF @ 5V 12mA @ 5V 0V @ 10µA