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- Тип канала
- Напряжение сток-исток (Vdss)
- Входная емкость (Ciss) (Max) @ Vds
- Ток стока @ Vds (Vgs=0)
- Напряжение отсечки (VGS off) @ Id
- Сопротивление канала (On)
- Серия
Наименование | Описание | Производитель
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Package / Case
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Напряжение пробоя затвора (V(BR)GSS)
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Мощность - Макс.
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Вид монтажа
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Рабочая температура
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Тип корпуса
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Тип канала
|
Напряжение сток-исток (Vdss)
|
Входная емкость (Ciss) (Max) @ Vds
|
Ток стока @ Vds (Vgs=0)
|
Напряжение отсечки (VGS off) @ Id
|
Сопротивление канала (On)
|
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J110RLRAG | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 25V | 310mW | Through Hole | 135°C (TJ) | TO-92-3 | N-Channel | 10mA @ 15V | 500mV @ 1µA | 18 Ohms | ||
J112RL1 | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 5mA @ 15V | 1V @ 1µA | 50 Ohms | ||
PN4118 | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 3pF @ 10V | 80µA @ 10V | 1V @ 1nA | ||
J111RLRAG | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 20mA @ 15V | 3V @ 1µA | 30 Ohms | ||
J176 | SMALL SIGNAL P-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 2mA @ 15V | 1V @ 10nA | 250 Ohms | ||
2N5639G | SMALL SIGNAL FET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 35V | 310mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30V | 10pF @ 12V (VGS) | 25mA @ 20V | 60 Ohms | |
2N5639RLRAG | SMALL SIGNAL FET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 310mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30V | 10pF @ 12V (VGS) | 25mA @ 20V | 60 Ohms | |
J112RLRAG | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 5mA @ 15V | 1V @ 1µA | 50 Ohms | ||
J112,126 | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 400mW | Through Hole | 150°C (TJ) | TO-92-3 | N-Channel | 40V | 6pF @ 10V (VGS) | 5mA @ 15V | 1V @ 1µA | 50 Ohms |
TIS74 | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 18pF @ 10V (VGS) | 20mA @ 15V | 2V @ 4nA | 40 Ohms | |
2N5638RLRA | SMALL SIGNAL FET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 310mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30V | 10pF @ 12V (VGS) | 50mA @ 20V | 30 Ohms | |
2N5639 | SMALL SIGNAL FET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 35V | 310mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30V | 10pF @ 12V (VGS) | 25mA @ 20V | 60 Ohms |
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