- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Мощность - Макс.
-
- Тип корпуса
- Входной каскад
- IGBT Type
- Обратный ток коллектора
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Время обратного восстановления (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Конфигурация
|
Рабочая температура
|
Тип корпуса
|
Входной каскад
|
IGBT Type
|
Обратный ток коллектора
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
Время обратного восстановления (trr)
|
NTC Thermistor
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IFS100B12N3E4_B39 | IGBT MOD 1200V 100A 515W | Infineon Technologies | Module | 100A | 1200V | 515W | Chassis Mount | Three Phase Inverter | 175°C (TJ) | Module | Trench Field Stop | 1mA | 2.1V @ 15V, 100A | 6.3nF @ 25V | Standard | Yes | ||||||||
| IGC54T65R3QEX1SA1 | IGBT CHIP | Infineon Technologies | Die | 100A | 650V | Surface Mount | -40°C ~ 175°C (TJ) | Die | Standard | Trench Field Stop | 2.22V @ 15V, 100A | 300A | TrenchStop™ | |||||||||||
| FS100R07N3E4_B11 | IGBT, 100A, 650V, N-CHANNEL | Infineon Technologies | Module | 100A | 650V | 335W | Chassis Mount | Three Phase Inverter | -40°C ~ 150°C (TJ) | Module | Trench Field Stop | 1mA | 1.95V @ 15V, 100A | 6.2nF @ 25V | Standard | Yes | ||||||||
| IXXH50N60C3D1 | IGBT 600V 100A 600W TO247AD | IXYS | TO-247-3 | 100A | 600V | 600W | Through Hole | -55°C ~ 175°C (TJ) | TO-247 (IXXH) | Standard | PT | 2.3V @ 15V, 36A | 360V, 36A, 5Ohm, 15V | 200A | 25ns | 720µJ (on), 330µJ (off) | 64nC | 24ns/62ns | GenX3™, XPT™ | |||||
| APT40GP60BG | IGBT 600V 100A 543W TO247 | Microchip Technology | TO-247-3 | 100A | 600V | 543W | Through Hole | -55°C ~ 150°C (TJ) | TO-247 [B] | Standard | PT | 2.7V @ 15V, 40A | 400V, 40A, 5Ohm, 15V | 160A | 385µJ (on), 352µJ (off) | 135nC | 20ns/64ns | POWER MOS 7® | ||||||
| APT75GP120B2G | IGBT 1200V 100A 1042W TMAX | Microchip Technology | TO-247-3 Variant | 100A | 1200V | 1042W | Through Hole | -55°C ~ 150°C (TJ) | Standard | PT | 3.9V @ 15V, 75A | 600V, 75A, 5Ohm, 15V | 300A | 1620µJ (on), 2500µJ (off) | 320nC | 20ns/163ns | POWER MOS 7® | |||||||
| APTCV60TLM45T3G | IGBT MODULE 600V 100A 250W SP3 | Microchip Technology | SP3 | 100A | 600V | 250W | Chassis Mount | Three Level Inverter - IGBT, FET | -40°C ~ 175°C (TJ) | SP3 | Trench Field Stop | 250µA | 1.9V @ 15V, 75A | 4.62nF @ 25V | Standard | Yes | ||||||||
| APTGT75A120TG | IGBT MODULE 1200V 100A 350W SP4 | Microsemi Corporation | SP4 | 100A | 1200V | 350W | Chassis Mount | Half Bridge | -40°C ~ 150°C (TJ) | SP4 | Trench Field Stop | 250µA | 2.1V @ 15V, 75A | 5.34nF @ 25V | Standard | Yes | ||||||||
| APT80GP60B2G | IGBT 600V 100A 1041W TMAX | Microsemi Corporation | TO-247-3 Variant | 100A | 600V | 1041W | Through Hole | T-MAX™ [B2] | Standard | PT | 2.7V @ 15V, 80A | POWER MOS 7® | ||||||||||||
| APT40GP90BG | IGBT 900V 100A 543W TO247 | Microsemi Corporation | TO-247-3 | 100A | 900V | 543W | Through Hole | -55°C ~ 150°C (TJ) | TO-247 [B] | Standard | PT | 3.9V @ 15V, 40A | 600V, 40A, 5Ohm, 15V | 160A | 825µJ (off) | 145nC | 16ns/75ns | POWER MOS 7® | ||||||
| CM100TU-24F | IGBT MOD 1200V 100A 500W | Powerex Inc. | Module | 100A | 1200V | 500W | Chassis Mount | Three Phase Inverter | -40°C ~ 150°C (TJ) | Module | Trench | 1mA | 2.4V @ 15V, 100A | 39nF @ 10V | Standard | No | IGBTMOD™ | |||||||
| CM100TF-24H | IGBT MOD 1200V 100A 780W | Powerex Inc. | Module | 100A | 1200V | 780W | Chassis Mount | Three Phase Inverter | -40°C ~ 150°C (TJ) | Module | 1mA | 3.4V @ 15V, 100A | 20nF @ 10V | Standard | No | IGBTMOD™ | ||||||||
| RJH65T14DPQ-A0#T0 | IGBT TRENCH 650V 100A TO247A | Renesas Electronics America Inc | TO-247-3 | 100A | 650V | 250W | Through Hole | 175°C (TJ) | TO-247A | Standard | Trench | 1.75V @ 15V, 50A | 400V, 50A, 10Ohm, 15V | 250ns | 1.3mJ (on), 1.2mJ (off) | 80nC | 38ns/125ns | |||||||
| STGYA50H120DF2 | TRENCH GATE FIELD-STOP, 1200 V, | STMicroelectronics | TO-247-3 | 100A | 1200V | 535W | Through Hole | -55°C ~ 175°C (TJ) | TO-247 | Standard | Trench Field Stop | 2.6V @ 15V, 50A | 600V, 50A, 10Ohm, 15V | 200A | 340ns | 2mJ (on), 2.1mJ (off) | 210nC | 40ns/284ns | ||||||
| VS-70MT060WHTAPBF | IGBT MODULE 600V 100A 347W MTP | Vishay General Semiconductor - Diodes Division | 12-MTP Module | 100A | 600V | 347W | Chassis Mount | Half Bridge | -40°C ~ 150°C (TJ) | MTP | NPT | 700µA | 3.4V @ 15V, 140A | 8nF @ 30V | Standard | No |
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