- Тип корпуса
- Производитель
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
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| SIE806DF-T1-E3 | MOSFET N-CH 30V 60A 10-POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 30V | 60A (Tc) | 1.7mOhm @ 25A, 10V | 4.5V, 10V | 2V @ 250µA | 250nC @ 10V | 13000pF @ 15V | ±12V | TrenchFET® |
| SIE808DF-T1-GE3 | MOSFET N-CH 20V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 20V | 60A (Tc) | 1.6mOhm @ 25A, 10V | 4.5V, 10V | 3V @ 250µA | 155nC @ 10V | 8800pF @ 10V | ±20V | TrenchFET® |
| SIE808DF-T1-E3 | MOSFET N-CH 20V 60A 10-POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 20V | 60A (Tc) | 1.6mOhm @ 25A, 10V | 4.5V, 10V | 3V @ 250µA | 155nC @ 10V | 8800pF @ 10V | ±20V | TrenchFET® |
| SIE882DF-T1-GE3 | MOSFET N-CH 25V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 25V | 60A (Tc) | 1.4mOhm @ 20A, 10V | 4.5V, 10V | 2.2V @ 250µA | 145nC @ 10V | 6400pF @ 12.5V | ±20V | TrenchFET® |
| SIE812DF-T1-GE3 | MOSFET N-CH 40V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 40V | 60A (Tc) | 2.6mOhm @ 25A, 10V | 4.5V, 10V | 3V @ 250µA | 170nC @ 10V | 8300pF @ 20V | ±20V | TrenchFET® |
| SIE806DF-T1-GE3 | MOSFET N-CH 30V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 30V | 60A (Tc) | 1.7mOhm @ 25A, 10V | 4.5V, 10V | 2V @ 250µA | 250nC @ 10V | 13000pF @ 15V | ±12V | TrenchFET® |
| SIE854DF-T1-E3 | MOSFET N-CH 100V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 100V | 60A (Tc) | 14.2mOhm @ 13.2A, 10V | 10V | 4.4V @ 250µA | 75nC @ 10V | 3100pF @ 50V | ±20V | TrenchFET® |
| SIE816DF-T1-GE3 | MOSFET N-CH 60V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 60V | 60A (Tc) | 7.4mOhm @ 19.8A, 10V | 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | ±20V | TrenchFET® |
| SIE726DF-T1-E3 | MOSFET N-CH 30V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 30V | 60A (Tc) | 2.4mOhm @ 25A, 10V | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | 7400pF @ 15V | ±20V | SkyFET®, TrenchFET® |
| SIE818DF-T1-E3 | MOSFET N-CH 75V 60A 10-POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 75V | 60A (Tc) | 9.5mOhm @ 16A, 10V | 4.5V, 10V | 3V @ 250µA | 95nC @ 10V | 3200pF @ 38V | ±20V | TrenchFET® |
| SIE848DF-T1-E3 | MOSFET N-CH 30V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 30V | 60A (Tc) | 1.6mOhm @ 25A, 10V | 4.5V, 10V | 2.5V @ 250µA | 138nC @ 10V | 6100pF @ 15V | ±20V | TrenchFET® |
| SIE818DF-T1-GE3 | MOSFET N-CH 75V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 75V | 60A (Tc) | 9.5mOhm @ 16A, 10V | 4.5V, 10V | 3V @ 250µA | 95nC @ 10V | 3200pF @ 38V | ±20V | TrenchFET® |
| SIE848DF-T1-GE3 | MOSFET N-CH 30V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 30V | 60A (Tc) | 1.6mOhm @ 25A, 10V | 4.5V, 10V | 2.5V @ 250µA | 138nC @ 10V | 6100pF @ 15V | ±20V | TrenchFET® |
| SIE854DF-T1-GE3 | MOSFET N-CH 100V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 100V | 60A (Tc) | 14.2mOhm @ 13.2A, 10V | 10V | 4.4V @ 250µA | 75nC @ 10V | 3100pF @ 50V | ±20V | TrenchFET® |
| SIE868DF-T1-GE3 | MOSFET N-CH 40V 60A POLARPAK | Vishay Siliconix | 10-PolarPAK® (L) | Surface Mount | 10-PolarPAK® (L) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 125W (Tc) | 40V | 60A (Tc) | 2.3mOhm @ 20A, 10V | 4.5V, 10V | 2.2V @ 250µA | 145nC @ 10V | 6100pF @ 20V | ±20V | TrenchFET® |
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