- Выходная мощность
- Производитель
- Тип корпуса
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Выходная мощность
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Усиление
|
Voltage - Test
|
Current - Test
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF6VP41KHR5 | RF N-CHANNEL, MOSFET | Freescale Semiconductor | NI-1230 | 1000W | 450MHz | 110V | NI-1230 | LDMOS (Dual) | 20dB | 50V | 150mA | |
| MRF6VP121KHR5-FR | RF 2-ELEMENT, L BAND, N-CHANNEL | Freescale Semiconductor | NI-1230 | 1000W | 1.215GHz | 110V | 10µA | NI-1230 | LDMOS (Dual) | 21.4dB | 50V | 150mA |
| MRF6VP41KHR7 | POWER, N-CHANNEL, MOSFET | Freescale Semiconductor | NI-1230 | 1000W | 450MHz | 110V | NI-1230 | LDMOS (Dual) | 20dB | 50V | 150mA | |
| MMRF1006HR5 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | NI-1230-4H | 1000W | 450MHz | 120V | SOT-979A | LDMOS | 20dB | 50V | 150mA | |
| MMRF1007HSR5 | FET RF 2CH 110V 1.03GHZ NI-1230S | NXP USA Inc. | NI-1230-4S | 1000W | 1.03GHz | 110V | NI-1230-4S | LDMOS (Dual) | 20dB | 50V | 150mA | |
| AFV141KHR5 | IC TRANS RF LDMOS | NXP USA Inc. | NI-1230-4H | 1000W | 1.4GHz | 105V | SOT-979A | LDMOS (Dual) | 17.7dB | 50V | 100mA | |
| MMRF1314HR5 | TRANS 960-1215MHZ 1000W PEAK 50V | NXP USA Inc. | NI-1230-4H | 1000W | 1.4GHz | 105V | SOT-979A | LDMOS (Dual) | 17.7dB | 50V | 100mA | |
| MRF6VP121KHSR6 | FET RF 2CH 110V 1.03GHZ NI-1230S | NXP USA Inc. | NI-1230S | 1000W | 1.03GHz | 110V | NI-1230S | LDMOS (Dual) | 20dB | 50V | 150mA | |
| MMRF1312HSR5 | TRANS 960-1215MHZ 1000W PEAK 50V | NXP USA Inc. | NI-1230-4S | 1000W | 1.034GHz | 112V | NI-1230-4S | LDMOS (Dual) | 19.6dB | 50V | 100mA | |
| MRF6VP41KHR6 | FET RF 2CH 110V 450MHZ NI1230 | NXP USA Inc. | NI-1230 | 1000W | 450MHz | 110V | NI-1230 | LDMOS (Dual) | 20dB | 50V | 150mA | |
| MMRF1312HR5 | TRANS 900-1215MHZ 1000W PEAK 50V | NXP USA Inc. | NI-1230-4H | 1000W | 1.03GHz | 112V | SOT-979A | LDMOS (Dual) | 19.6dB | 50V | 100mA | |
| MRF6VP41KHR7 | FET RF 2CH 110V 450MHZ NI-1230 | NXP USA Inc. | NI-1230 | 1000W | 450MHz | 110V | NI-1230 | LDMOS (Dual) | 20dB | 50V | 150mA | |
| AFV121KGSR5 | IC TRANS RF LDMOS | NXP USA Inc. | NI-1230-4S GULL | 1000W | 960MHz ~ 1.22GHz | 112V | NI-1230-4S GW | LDMOS (Dual) | 19.6dB | 50V | 100mA | |
| MRF6VP41KHSR7 | FET RF 2CH 110V 450MHZ NI1230S | NXP USA Inc. | NI-1230S | 1000W | 450MHz | 110V | NI-1230S | LDMOS (Dual) | 20dB | 50V | 150mA | |
| STAC4932B | TRANSISTOR RF MOSF N-CH STAC244B | STMicroelectronics | STAC244B | 1000W | 123MHz | 200V | STAC244B | N-Channel | 26dB | 100V | 500mA |
- 10
- 15
- 50
- 100