-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTMC120HM17CT3AG | POWER MODULE - SIC MOSFET | Microchip Technology | SP3 | 750W | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 4 N-Channel | 1200V (1.2kV) | 147A (Tc) | Silicon Carbide (SiC) | 17mOhm @ 100A, 20V | 4V @ 30mA | 332nC @ 5V | 5576pF @ 1000V | |
| APTC80H29T3G | MOSFET 4N-CH 800V 15A SP3 | Microchip Technology | SP3 | 156W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 800V | 15A | Standard | 290mOhm @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | 2254pF @ 25V | |
| APTMC60TL11CT3AG | MOSFET 4N-CH 1200V 28A SP3 | Microchip Technology | SP3 | 125W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Three Level Inverter) | 1200V (1.2kV) | 28A (Tc) | Silicon Carbide (SiC) | 98mOhm @ 20A, 20V | 2.2V @ 1mA | 49nC @ 20V | 950pF @ 1000V | |
| APTC60BBM24T3G | MOSFET 2N-CH 600V 95A SP3F | Microchip Technology | SP3 | 462W | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 600V | 95A | Standard | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | CoolMOS™ | |
| APTM50DDAM65T3G | MOSFET 2N-CH 500V 51A SP3 | Microchip Technology | SP3 | 390W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 500V | 51A | Standard | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | |
| APTC60HM24T3G | MOSFET 4N-CH 600V 95A SP3 | Microchip Technology | SP3 | 462W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 600V | 95A | Super Junction | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | CoolMOS™ |
| APTC60HM70RT3G | MOSFET 4N-CH 600V 39A SP3F | Microchip Technology | SP3 | 250W | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) + Bridge Rectifier | 600V | 39A | Standard | 70mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | CoolMOS™ | |
| APTM50H10FT3G | MOSFET 4N-CH 500V 37A SP3 | Microchip Technology | SP3 | 312W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 500V | 37A | Standard | 120mOhm @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | 4367pF @ 25V |
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