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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Вид монтажа
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Package / Case
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Технология
|
Рабочая температура
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Тип канала
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Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
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Непрерывный ток стока (Id) @ 25°C
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Rds On (Max) @ Id, Vgs
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Drive Voltage (Max Rds On, Min Rds On)
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
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Серия
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IXFH28N50Q | MOSFET N-CH 500V 28A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 375W (Tc) | 500V | 28A (Tc) | 200mOhm @ 14A, 10V | 10V | 4.5V @ 4mA | 94nC @ 10V | 3000pF @ 25V | ±30V | HiPerFET™ |
IXFH110N25T | MOSFET N-CH 250V 110A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 694W (Tc) | 250V | 110A (Tc) | 24mOhm @ 55A, 10V | 10V | 4.5V @ 3mA | 157nC @ 10V | 9400pF @ 25V | ±20V | TrenchHV™ |
IXFH32N50Q | MOSFET N-CH 500V 30A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 500V | 32A (Tc) | 160mOhm @ 16A, 10V | 10V | 4.5V @ 4mA | 190nC @ 10V | 4925pF @ 25V | ±20V | HiPerFET™ |
IXFH4N100Q | MOSFET N-CH 1000V 4A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 150W (Tc) | 1000V | 4A (Tc) | 3Ohm @ 2A, 10V | 10V | 5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | ±20V | HiPerFET™ |
IXFH80N085 | MOSFET N-CH 85V 80A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 85V | 80A (Tc) | 9mOhm @ 40A, 10V | 10V | 4V @ 4mA | 180nC @ 10V | 4800pF @ 25V | ±20V | HiPerFET™ |
IXFH70N20Q3 | MOSFET N-CH 200V 70A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 690W (Tc) | 200V | 70A (Tc) | 40mOhm @ 35A, 10V | 10V | 6.5V @ 4mA | 67nC @ 10V | 3150pF @ 25V | ±20V | HiPerFET™ |
IXFH30N85X | MOSFET N-CH 850V 30A TO247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 695W (Tc) | 850V | 30A (Tc) | 220mOhm @ 500mA, 10V | 10V | 5.5V @ 2.5mA | 68nC @ 10V | 2460pF @ 25V | ±30V | HiPerFET™ |
IXFH80N10Q | MOSFET N-CH 100V 80A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 100V | 80A (Tc) | 15mOhm @ 40A, 10V | 10V | 4V @ 4mA | 180nC @ 10V | 4500pF @ 25V | ±20V | HiPerFET™ |
IXFH32N50 | MOSFET N-CH 500V 32A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 500V | 32A (Tc) | 150mOhm @ 15A, 10V | 10V | 4V @ 4mA | 300nC @ 10V | 5700pF @ 25V | ±20V | HiPerFET™ |
IXFH44N50Q3 | MOSFET N-CH 500V 44A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 830W (Tc) | 500V | 44A (Tc) | 140mOhm @ 22A, 10V | 10V | 6.5V @ 4mA | 93nC @ 10V | 4800pF @ 25V | ±30V | HiPerFET™ |
IXFH30N50Q | MOSFET N-CH 500V 30A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 500V | 30A (Tc) | 160mOhm @ 15A, 10V | 10V | 4V @ 4mA | 300nC @ 10V | 5700pF @ 25V | ±20V | HiPerFET™ |
IXFH170N10P | MOSFET N-CH 100V 170A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 715W (Tc) | 100V | 170A (Tc) | 9mOhm @ 500mA, 10V | 10V | 5V @ 4mA | 198nC @ 10V | 6000pF @ 25V | ±20V | HiPerFET™, PolarP2™ |
IXFH20N60Q | MOSFET N-CH 600V 20A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 600V | 20A (Tc) | 350mOhm @ 10A, 10V | 10V | 4.5V @ 4mA | 90nC @ 10V | 3300pF @ 25V | ±30V | HiPerFET™ |
IXFH32N48Q | MOSFET N-CH 480V 32A TO247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 480V | 32A (Tc) | 130mOhm @ 15A, 10V | 10V | 4V @ 4mA | 300nC @ 10V | 5200pF @ 25V | ±20V | HiPerFET™ |
IXFH150N20T | MOSFET N-CH 200V 150A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 890W (Tc) | 200V | 150A (Tc) | 15mOhm @ 75A, 10V | 10V | 5V @ 4mA | 177nC @ 10V | 11700pF @ 25V | ±20V | HiPerFET™, TrenchT2™ |
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