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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Вид монтажа
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Package / Case
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Технология
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Рабочая температура
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Тип канала
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Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
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Непрерывный ток стока (Id) @ 25°C
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Rds On (Max) @ Id, Vgs
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Drive Voltage (Max Rds On, Min Rds On)
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
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Серия
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IXFH12N100Q | MOSFET N-CH 1000V 12A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 1000V | 12A (Tc) | 1.05Ohm @ 6A, 10V | 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | ±20V | HiPerFET™ |
IXFH6N100 | MOSFET N-CH 1KV 6A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 180W (Tc) | 1000V | 6A (Tc) | 2Ohm @ 500mA, 10V | 10V | 4.5V @ 2.5mA | 130nC @ 10V | 2600pF @ 25V | ±20V | HiPerFET™ |
IXFH96N20P | MOSFET N-CH 200V 96A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 600W (Tc) | 200V | 96A (Tc) | 24mOhm @ 500mA, 10V | 10V | 5V @ 4mA | 145nC @ 10V | 4800pF @ 25V | ±20V | PolarHT™ HiPerFET™ |
IXFH24N80P | MOSFET N-CH 800V 24A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 650W (Tc) | 800V | 24A (Tc) | 400mOhm @ 12A, 10V | 10V | 5V @ 4mA | 105nC @ 10V | 7200pF @ 25V | ±30V | HiPerFET™, PolarHT™ |
IXFH10N100P | MOSFET N-CH 1KV 10A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 380W (Tc) | 1000V | 10A (Tc) | 1.4Ohm @ 5A, 10V | 10V | 6.5V @ 1mA | 56nC @ 10V | 3030pF @ 25V | ±30V | HiPerFET™, PolarP2™ |
IXFH150N15P | MOSFET N-CH 150V 150A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 714W (Tc) | 150V | 150A (Tc) | 13mOhm @ 500mA, 10V | 10V | 5V @ 4mA | 190nC @ 10V | 5800pF @ 25V | ±20V | PolarHT™ HiPerFET™ |
IXFH23N80Q | MOSFET N-CH 800V 23A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500W (Tc) | 800V | 23A (Tc) | 420mOhm @ 500mA, 10V | 10V | 4.5V @ 3mA | 130nC @ 10V | 4900pF @ 25V | ±30V | HiPerFET™ |
IXFH13N100 | MOSFET N-CH 1000V 12.5A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 1000V | 12.5A (Tc) | 900mOhm @ 500mA, 10V | 10V | 4.5V @ 4mA | 155nC @ 10V | 4000pF @ 25V | ±20V | HiPerFET™ |
IXFH10N90 | MOSFET N-CH 900V 10A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 900V | 10A (Tc) | 1.1Ohm @ 5A, 10V | 10V | 4.5V @ 4mA | 155nC @ 10V | 4200pF @ 25V | ±20V | HiPerFET™ |
IXFH13N80Q | MOSFET N-CH 800V 13A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 250W (Tc) | 800V | 13A (Tc) | 700mOhm @ 6.5A, 10V | 10V | 4.5V @ 4mA | 90nC @ 10V | 3250pF @ 25V | ±20V | HiPerFET™ |
IXFH15N100 | MOSFET N-CH 1000V 15A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 1000V | 15A (Tc) | 700mOhm @ 500mA, 10V | 10V | 4.5V @ 4mA | 220nC @ 10V | 4500pF @ 25V | ±20V | HiPerFET™ |
IXFH12N90 | MOSFET N-CH 900V 12A TO-247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 900V | 12A (Tc) | 900mOhm @ 6A, 10V | 10V | 4.5V @ 4mA | 155nC @ 10V | 4200pF @ 25V | ±20V | HiPerFET™ |
IXFH74N20 | MOSFET N-CH 200V 74A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 200V | 74A (Tc) | 30mOhm @ 500mA, 10V | 10V | 4V @ 4mA | 280nC @ 10V | 5400pF @ 25V | ±20V | HiPerFET™ |
IXFH320N10T2 | MOSFET N-CH 100V 320A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1000W (Tc) | 100V | 320A (Tc) | 3.5mOhm @ 100A, 10V | 10V | 4V @ 250µA | 430nC @ 10V | 26000pF @ 25V | ±20V | HiPerFET™, TrenchT2™ |
IXFH35N30Q | MOSFET N-CH 300V 35A TO247AD | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 300V | 35A (Tc) | 100mOhm @ 17.5A, 10V | 10V | 4V @ 4mA | 200nC @ 10V | 4800pF @ 25V | ±20V | HiPerFET™ |
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