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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Вид монтажа
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Package / Case
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Технология
|
Рабочая температура
|
Тип канала
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Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
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Непрерывный ток стока (Id) @ 25°C
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FET Feature
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Rds On (Max) @ Id, Vgs
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Drive Voltage (Max Rds On, Min Rds On)
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
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Серия
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IXTH12N70X2 | MOSFET N-CH | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 180W (Tc) | 700V | 12A (Tc) | 300mOhm @ 6A, 10V | 10V | 4.5V @ 250µA | 19nC @ 10V | 960pF @ 25V | ±30V | ||
IXTH150N15X4 | MOSFET N-CH 150V 150A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 480W (Tc) | 150V | 150A (Tc) | 7.2mOhm @ 75A, 10V | 10V | 4.5V @ 250µA | 105nC @ 10V | 5500pF @ 25V | ±20V | ||
IXFH16N60P3 | MOSFET N-CH 600V 16A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 347W (Tc) | 600V | 16A (Tc) | 470mOhm @ 500mA, 10V | 10V | 5V @ 1.5mA | 36nC @ 10V | 1830pF @ 25V | ±30V | HiPerFET™ | |
IXTH64N10L2 | MOSFET N-CH 100V 64A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 357W (Tc) | 100V | 64A (Tc) | 32mOhm @ 32A, 10V | 10V | 4.5V @ 250µA | 100nC @ 10V | 3620pF @ 25V | ±20V | ||
IXTH130N15X4 | MOSFET N-CH 150V 130A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 400W (Tc) | 150V | 130A (Tc) | 8.5mOhm @ 70A, 10V | 10V | 4.5V @ 250µA | 87nC @ 10V | 4770pF @ 25V | ±20V | ||
IXFH270N06T3 | 60V/270A TRENCHT3 HIPERFET MOSFE | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 480W (Tc) | 60V | 270A (Tc) | 3.1mOhm @ 100A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 12600pF @ 25V | ±20V | HiperFET™, TrenchT3™ | |
IXTH34N65X2 | MOSFET N-CH 650V 34A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 540W (Tc) | 650V | 34A (Tc) | 105mOhm @ 17A, 10V | 10V | 4.5V @ 4mA | 53nC @ 10V | 3120pF @ 25V | ±30V | ||
IXFH220N20X3 | 200V/220A ULTRA JUNCTION X3-CLAS | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 960W (Tc) | 200V | 220A (Tc) | 6.2mOhm @ 110A, 10V | 10V | 4.5V @ 4mA | 204nC @ 10V | 13600pF @ 25V | ±20V | HiPerFET™ | |
IXTH340N04T4 | MOSFET N-CH 40V 340A | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 480W (Tc) | 40V | 340A (Tc) | 1.9mOhm @ 100A, 10V | 10V | 4V @ 250µA | 256nC @ 10V | 13000pF @ 25V | ±15V | TrenchT4™ | |
IXFH150N30X3 | 300V/150A ULTRA JUNCTION X3-CLAS | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 890W (Tc) | 300V | 150A (Tc) | 8.3mOhm @ 75A, 10V | 10V | 4.5V @ 4mA | 254nC @ 10V | 13.1nF @ 25V | ±20V | HiPerFET™ | |
IXFH120N25X3 | MOSFET N-CH 250V 120A TO247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 520W (Tc) | 250V | 120A (Tc) | 12mOhm @ 60A, 10V | 10V | 4.5V @ 4mA | 122nC @ 10V | 7870pF @ 25V | ±20V | HiPerFET™ | |
IXTJ6N150 | MOSFET N-CH 1500V 3A ISOTO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 1500V | 3A (Tc) | 3.85Ohm @ 3A, 10V | 10V | 5V @ 250µA | 67nC @ 10V | 2230pF @ 25V | ±30V | ||
IXTH3N200P3HV | MOSFET N-CH 2000V 3A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 520W (Tc) | 2000V | 3A (Tc) | 8Ohm @ 1.5A, 10V | 10V | 5V @ 250µA | 70nC @ 10V | 1860pF @ 25V | ±20V | ||
IXTH48N65X2 | MOSFET N-CH 650V 48A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 660W (Tc) | 650V | 48A (Tc) | 68mOhm @ 24A, 10V | 10V | 4.5V @ 4mA | 77nC @ 10V | 4420pF @ 25V | ±30V | ||
IXFH56N30X3 | 300V/56A ULTRA JUNCTION X3-CLASS | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 320W (Tc) | 300V | 56A (Tc) | 27mOhm @ 28A, 10V | 10V | 4.5V @ 1.5mA | 56nC @ 10V | 3.75nF @ 25V | ±20V | HiPerFET™ |
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