• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 27
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IXTP50N20PM MOSFET N-CH 200V 20A TO-220 IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 90W (Tc) 200V 20A (Tc) 60mOhm @ 25A, 10V 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V ±20V PolarHT™
IXFP4N100PM DISCMOSFETN-CH HIPERFET-POLA TO- IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 40W (Tc) 1000V 2.1A (Tc) 3.3Ohm @ 2A, 10V 10V 6V @ 250µA 26nC @ 10V 1456pF @ 25V ±20V
IXTP20N65X2M DISCMSFT NCHULTRAJNCTX2CLASS TO- IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 36W (Tc) 650V 20A (Tc) 185mOhm @ 10A, 10V 10V 4.5V @ 250µA 27nC @ 10V 1450pF @ 25V ±30V
IXFP8N85XM MOSFET N-CH IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 33W (Tc) 850V 8A (Tc) 850mOhm @ 4A, 10V 10V 5.5V @ 250µA 17nC @ 10V 654pF @ 25V ±30V HiPerFET™
IXTP12N65X2M MOSFET N-CH TO-220 IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 40W (Tc) 650V 12A (Tc) 300mOhm @ 6A, 10V 10V 4.5V @ 250µA 17.7nC @ 10V 1100pF @ 25V ±30V
IXFP8N65X2M MOSFET N-CH TO-220 IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 150W (Tc) 650V 8A (Tc) 450mOhm @ 4A, 10V 10V 5V @ 250µA 11nC @ 10V 790pF @ 25V ±30V HiPerFET™
IXFP38N30X3M FET N-CHANNEL IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 34W (Tc) 300V 38A (Tc) 35nC @ 15V 2440pF @ 15V HiPerFET™
IXTP48N20TM DISCMSFT NCHTRENCHGATE-GEN1 TO-2 IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 250W (Tc) 200V 48A (Tc) 50mOhm @ 24A, 10V 10V 4.5V @ 250µA 60nC @ 10V 3090pF @ 25V ±30V
IXTP8N70X2M MOSFET N-CHANNEL 700V 4A TO220 IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 32W (Tc) 700V 4A (Tc) 550mOhm @ 500mA, 10V 10V 5V @ 250µA 12nC @ 10V 800pF @ 10V ±30V
IXTP14N60PM MOSFET N-CH 600V 7A TO-220 IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 75W (Tc) 600V 7A (Tc) 550mOhm @ 7A, 10V 10V 5.5V @ 250µA 36nC @ 10V 2500pF @ 25V ±30V PolarHV™
IXTP4N70X2M MOSFET N-CH IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 30W (Tc) 700V 4A (Tc) 850mOhm @ 2A, 10V 10V 4.5V @ 250µA 11.8nC @ 10V 386pF @ 25V ±30V
IXFP34N65X2M MOSFET N-CH IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 40W (Tc) 650V 34A (Tc) 100mOhm @ 17A, 10V 10V 5V @ 1.5mA 56nC @ 10V 3230pF @ 25V ±30V HiPerFET™
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