• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 212
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IXTP1R4N100P MOSFET N-CH 1000V 1.4A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 63W (Tc) 1000V 1.4A (Tc) 11Ohm @ 500mA, 10V 10V 4.5V @ 50µA 17.8nC @ 10V 450pF @ 25V ±20V Polar™
IXTP7N60PM MOSFET N-CH 600V 4A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 41W (Tc) 600V 4A (Tc) 1.1Ohm @ 3.5A, 10V 10V 5.5V @ 100µA 20nC @ 10V 1180pF @ 25V ±30V Polar™
IXTP44P15T MOSFET P-CH 150V 44A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) P-Channel 298W (Tc) 150V 44A (Tc) 65mOhm @ 500mA, 10V 10V 4V @ 250µA 175nC @ 10V 13400pF @ 25V ±15V TrenchP™
IXTP340N04T4 MOSFET N-CH 40V 340A IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 480W (Tc) 40V 340A (Tc) 1.9mOhm @ 100A, 10V 10V 4V @ 250µA 256nC @ 10V 13000pF @ 25V ±15V TrenchT4™
IXTP6N50D2 MOSFET N-CH 500V 6A TO220AB IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 300W (Tc) 500V 6A (Tc) Depletion Mode 500mOhm @ 3A, 0V 96nC @ 5V 2800pF @ 25V ±20V
IXFP270N06T3 60V/270A TRENCHT3 HIPERFET MOSFE IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 480W (Tc) 60V 270A (Tc) 3.1mOhm @ 100A, 10V 10V 4V @ 250µA 200nC @ 10V 12600pF @ 25V ±20V HiperFET™, TrenchT3™
IXFP12N50PM MOSFET N-CH 500V 6A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 50W (Tc) 500V 6A (Tc) 500mOhm @ 6A, 10V 10V 5.5V @ 1mA 29nC @ 10V 1830pF @ 25V ±30V HiPerFET™, PolarP2™
IXTP50N20P MOSFET N-CH 200V 50A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 360W (Tc) 200V 50A (Tc) 60mOhm @ 50A, 10V 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V ±20V PolarHT™
IXTP54N30T MOSFET N-CH 300V 54A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) N-Channel 300V 54A (Tc)
IXTP120N075T2 MOSFET N-CH 75V 120A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 250W (Tc) 75V 120A (Tc) 7.7mOhm @ 60A, 10V 10V 4V @ 250µA 78nC @ 10V 4740pF @ 25V ±20V TrenchT2™
IXTP15N20T MOSFET N-CH 200V 15A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) N-Channel 200V 15A (Tc)
IXTP1R6N100D2 MOSFET N-CH 1000V 1.6A TO220AB IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 100W (Tc) 1000V 1.6A (Tc) Depletion Mode 10Ohm @ 800mA, 0V 10V 27nC @ 5V 645pF @ 25V ±20V
IXTP08N100P MOSFET N-CH 1000V 800MA TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 42W (Tc) 1000V 800mA (Tc) 20Ohm @ 500mA, 10V 10V 4V @ 50µA 11.3nC @ 10V 240pF @ 25V ±20V Polar™
IXTP180N10T MOSFET N-CH 100V 180A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 480W (Tc) 100V 180A (Tc) 6.4mOhm @ 25A, 10V 10V 4.5V @ 250µA 151nC @ 10V 6900pF @ 25V ±30V TrenchMV™
IXFP130N10T2 MOSFET N-CH 100V 130A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 360W (Tc) 100V 130A (Tc) 9.1mOhm @ 65A, 10V 10V 4.5V @ 1mA 130nC @ 10V 6600pF @ 25V ±20V GigaMOS™, HiPerFET™, TrenchT2™
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