-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTP88N085T | MOSFET N-CH 85V 88A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 85V | 88A (Tc) | 11mOhm @ 25A, 10V | 10V | 4V @ 100µA | 69nC @ 10V | 3140pF @ 25V | ±20V | TrenchMV™ | |
| IXTP86N20T | MOSFET N-CH 200V 86A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 480W (Tc) | 200V | 86A (Tc) | 29mOhm @ 500mA, 10V | 10V | 5V @ 1mA | 90nC @ 10V | 4500pF @ 25V | ±30V | ||
| IXFP4N100P | MOSFET N-CH 1000V 4A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 150W (Tc) | 1000V | 4A (Tc) | 3.3Ohm @ 2A, 10V | 10V | 5V @ 250µA | 26nC @ 10V | 1456pF @ 25V | ±20V | HiPerFET™, PolarP2™ | |
| IXFP12N50P | MOSFET N-CH 500V 12A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 200W (Tc) | 500V | 12A (Tc) | 500mOhm @ 6A, 10V | 10V | 5.5V @ 1mA | 29nC @ 10V | 1830pF @ 25V | ±30V | HiPerFET™, PolarP2™ | |
| IXTP182N055T | MOSFET N-CH 55V 182A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 360W (Tc) | 55V | 182A (Tc) | 5mOhm @ 25A, 10V | 10V | 4V @ 250µA | 114nC @ 10V | 4850pF @ 25V | ±20V | TrenchMV™ | |
| IXFP230N075T2 | MOSFET N-CH 75V 230A | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 480W (Tc) | 75V | 230A (Tc) | 4.2mOhm @ 50A, 10V | 10V | 4V @ 1mA | 178nC @ 10V | 10500pF @ 25V | HiPerFET™, TrenchT2™ | ||
| IXFP130N15X3 | MOSFET N-CH | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 390W (Tc) | 150V | 130A (Tc) | 9mOhm @ 65A, 10V | 10V | 4.5V @ 1.5mA | 80nC @ 10V | 5230pF @ 25V | ±20V | HiPerFET™ | |
| IXTP64N055T | MOSFET N-CH 55V 64A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 130W (Tc) | 55V | 64A (Tc) | 13mOhm @ 500mA, 10V | 10V | 4V @ 25µA | 37nC @ 10V | 1420pF @ 25V | ±20V | TrenchMV™ | |
| IXTP5N60P | MOSFET N-CH 600V 5A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 100W (Tc) | 600V | 5A (Tc) | 1.7Ohm @ 2.5A, 10V | 10V | 5.5V @ 50µA | 14.2nC @ 10V | 750pF @ 25V | ±30V | PolarHV™ | |
| IXTP6N100D2 | MOSFET N-CH 1000V 6A TO220AB | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 1000V | 6A (Tc) | Depletion Mode | 2.2Ohm @ 3A, 0V | 95nC @ 5V | 2650pF @ 25V | ±20V | |||
| IXTP02N120P | MOSFET N-CH 1200V 0.2A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 33W (Tc) | 1200V | 200mA (Tc) | 75Ohm @ 100mA, 10V | 10V | 4V @ 100µA | 4.7nC @ 10V | 104pF @ 25V | ±20V | Polar™ | |
| IXFP12N65X2 | MOSFET N-CH | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 180W (Tc) | 650V | 12A (Tc) | 310mOhm @ 6A, 10V | 10V | 5V @ 250µA | 18.5nC @ 10V | 1134pF @ 25V | ±30V | HiPerFET™ | |
| IXTP10N60P | MOSFET N-CH 600V 10A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 200W (Tc) | 600V | 10A (Tc) | 740mOhm @ 5A, 10V | 10V | 5.5V @ 250µA | 32nC @ 10V | 1610pF @ 25V | ±30V | Polar™ | |
| IXTP80N075L2 | MOSFET N-CH 75V 80A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 357W (Tc) | 75V | 80A (Tc) | 24mOhm @ 40A, 10V | 10V | 4.5V @ 250µA | 103nC @ 10V | 3600pF @ 25V | ±20V | Linear L2™ | |
| IXFP24N60X | MOSFET N-CH 600V 24A TO220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 400W (Tc) | 600V | 24A (Tc) | 175mOhm @ 12A, 10V | 10V | 4.5V @ 2.5mA | 47nC @ 10V | 1910pF @ 25V | ±30V | HiPerFET™ |
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