Найдено: 212
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IXTP64N10L2 DISC MOSFET N-CH LINEAR L2 TO-22 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 357W (Tc) 100V 64A (Tc) 32mOhm @ 32A, 10V 10V 4.5V @ 250µA 100nC @ 10V 3620pF @ 25V ±20V
IXFP5N50PM MOSFET N-CH 500V 3.2A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 38W (Tc) 500V 3.2A (Tc) 1.4Ohm @ 2.5A, 10V 10V 5.5V @ 500µA 12.6nC @ 10V 620pF @ 25V ±30V HiPerFET™, PolarHT™
IXTP32N20T MOSFET N-CH 200V 32A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 200W (Tc) 200V 32A (Tc) 72mOhm @ 16A, 10V 10V 4.5V @ 250µA 38nC @ 10V 1760pF @ 25V ±20V
IXTP120N04T2 MOSFET N-CH 40V 120A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 200W (Tc) 40V 120A (Tc) 6.1mOhm @ 25A, 10V 10V 4V @ 250µA 58nC @ 10V 3240pF @ 25V ±20V TrenchT2™
IXTP160N085T MOSFET N-CH 85V 160A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 360W (Tc) 85V 160A (Tc) 6mOhm @ 50A, 10V 10V 4V @ 1mA 164nC @ 10V 6400pF @ 25V ±20V
IXTP55N075T MOSFET N-CH 75V 55A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 130W (Tc) 75V 55A (Tc) 19.5mOhm @ 27.5A, 10V 10V 4V @ 25µA 33nC @ 10V 1400pF @ 25V ±20V TrenchMV™
IXTP18P10T MOSFET P-CH 100V 18A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 83W (Tc) 100V 18A (Tc) 120mOhm @ 9A, 10V 10V 4.5V @ 250µA 39nC @ 10V 2100pF @ 25V ±15V TrenchP™
IXTP450P2 MOSFET N-CH 500V 16A TO220AB IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 300W (Tc) 500V 16A (Tc) 330mOhm @ 8A, 10V 10V 4.5V @ 250µA 43nC @ 10V 2530pF @ 25V ±30V PolarP2™
IXTP60N20T MOSFET N-CH 200V 60A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 500W (Tc) 200V 60A (Tc) 40mOhm @ 30A, 10V 10V 5V @ 250µA 73nC @ 10V 4530pF @ 25V ±20V Trench™
IXTP80N10T MOSFET N-CH 100V 80A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 230W (Tc) 100V 80A (Tc) 14mOhm @ 25A, 10V 10V 5V @ 100µA 60nC @ 10V 3040pF @ 25V ±20V TrenchMV™
IXFP110N15T2 MOSFET N-CH 150V 110A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 480W (Tc) 150V 110A (Tc) 13mOhm @ 55A, 10V 10V 4.5V @ 250µA 150nC @ 10V 8600pF @ 25V ±20V GigaMOS™, HiPerFET™, TrenchT2™
IXTP34N65X2 MOSFET N-CH IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 540W (Tc) 650V 34A (Tc) 96mOhm @ 17A, 10V 10V 5V @ 250µA 54nC @ 10V 3000pF @ 25V ±30V
IXFP34N65X2 MOSFET N-CH 650V 34A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 540W (Tc) 650V 34A (Tc) 105mOhm @ 17A, 10V 10V 5.5V @ 2.5mA 56nC @ 10V 3330pF @ 25V ±30V HiPerFET™
IXFP22N60P3 MOSFET N-CH 600V 22A TO220AB IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 500W (Tc) 600V 22A (Tc) 360mOhm @ 11A, 10V 10V 5V @ 1.5mA 38nC @ 10V 2600pF @ 25V ±30V HiPerFET™, Polar3™
IXTP110N12T2 120V/110A TRENCHT2 POWER MOSFET IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 517W (Tc) 120V 110A (Tc) 14mOhm @ 55A, 10V 10V 4.5V @ 250µA 120nC @ 10V 6570pF @ 25V ±20V TrenchT2™