-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
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Rds On (Max) @ Id, Vgs
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Drive Voltage (Max Rds On, Min Rds On)
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
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Серия
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IXFN80N50P | MOSFET N-CH 500V 66A SOT-227 | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 700W (Tc) | 500V | 66A (Tc) | 65mOhm @ 500mA, 10V | 10V | 5V @ 8mA | 195nC @ 10V | 12700pF @ 25V | ±30V | PolarHV™ | |
IXFN100N50Q3 | MOSFET N-CH 500V 82A SOT-227 | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 960W (Tc) | 500V | 82A (Tc) | 49mOhm @ 50A, 10V | 10V | 6.5V @ 8mA | 255nC @ 10V | 13800pF @ 25V | ±30V | HiPerFET™ | |
IXFN400N15X3 | MOSFET N-CH | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 695W (Tc) | 150V | 400A (Tc) | 2.5mOhm @ 200A, 10V | 10V | 4.5V @ 8mA | 365nC @ 10V | 23700pF @ 25V | ±20V | HiPerFET™ | |
IXFN24N100F | MOSFET N-CH 1000V 24A SOT227B | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 600W (Tc) | 1000V | 24A (Tc) | 390mOhm @ 12A, 10V | 10V | 5.5V @ 8mA | 195nC @ 10V | 6600pF @ 25V | ±20V | HiPerRF™ | |
IXFN66N85X | 850V/65A ULTRA JUNCTION X-CLASS | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 830W (Tc) | 850V | 65A (Tc) | 65mOhm @ 33A, 10V | 10V | 5.5V @ 8mA | 230nC @ 10V | 8900pF @ 25V | ±30V | HiPerFET™ | |
IXFN520N075T2 | MOSFET N-CH 75V 480A SOT227 | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 940W (Tc) | 75V | 480A (Tc) | 1.9mOhm @ 100A, 10V | 10V | 5V @ 8mA | 545nC @ 10V | 41000pF @ 25V | ±20V | GigaMOS™, HiPerFET™, TrenchT2™ | |
IXFN200N10P | MOSFET N-CH 100V 200A SOT-227B | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 680W (Tc) | 100V | 200A (Tc) | 7.5mOhm @ 500mA, 10V | 10V | 5V @ 8mA | 235nC @ 10V | 7600pF @ 25V | ±20V | Polar™ | |
IXFN62N80Q3 | MOSFET N-CH 800V 49A SOT-227 | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 960W (Tc) | 800V | 49A (Tc) | 140mOhm @ 31A, 10V | 10V | 6.5V @ 8mA | 270nC @ 10V | 13600pF @ 25V | ±30V | HiPerFET™ | |
IXFN48N50Q | MOSFET N-CH 500V 48A SOT-227B | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500W (Tc) | 500V | 48A (Tc) | 100mOhm @ 500mA, 10V | 10V | 4V @ 4mA | 190nC @ 10V | 7000pF @ 25V | ±20V | HiPerFET™ | |
IXFN180N25T | MOSFET N-CH 250V 168A SOT-227 | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 900W (Tc) | 250V | 168A (Tc) | 12.9mOhm @ 60A, 10V | 10V | 5V @ 8mA | 345nC @ 10V | 28000pF @ 25V | ±20V | GigaMOS™ | |
IXTN210P10T | MOSFET P-CH 100V 210A SOT-227 | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 830W (Tc) | 100V | 210A (Tc) | 7.5mOhm @ 105A, 10V | 10V | 4.5V @ 250µA | 740nC @ 10V | 69500pF @ 25V | ±15V | TrenchP™ | |
IXUN280N10 | MOSFET N-CH 100V 280A SOT-227B | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 770W (Tc) | 100V | 280A (Tc) | 5mOhm @ 140A, 10V | 10V | 4V @ 4mA | 440nC @ 10V | 18000pF @ 25V | ±20V | ||
IXFN100N10S2 | MOSFET N-CH 100V 100A SOT-227B | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 100V | 100A (Tc) | 15mOhm @ 500mA, 10V | 10V | 4V @ 4mA | 180nC @ 10V | 4500pF @ 25V | ±20V | HiPerFET™ | |
IXFN44N100P | MOSFET N-CH 1000V 37A SOT-227B | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 890W (Tc) | 1000V | 37A (Tc) | 220mOhm @ 22A, 10V | 10V | 6.5V @ 1mA | 305nC @ 10V | 19000pF @ 25V | ±30V | Polar™ | |
IXTN600N04T2 | MOSFET N-CH 40V 600A SOT-227 | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 940W (Tc) | 40V | 600A (Tc) | 1.05mOhm @ 100A, 10V | 10V | 3.5V @ 250µA | 590nC @ 10V | 40000pF @ 25V | ±20V | GigaMOS™, TrenchT2™ |
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