Найдено: 175
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IXFN80N50P MOSFET N-CH 500V 66A SOT-227 IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 700W (Tc) 500V 66A (Tc) 65mOhm @ 500mA, 10V 10V 5V @ 8mA 195nC @ 10V 12700pF @ 25V ±30V PolarHV™
IXFN100N50Q3 MOSFET N-CH 500V 82A SOT-227 IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 960W (Tc) 500V 82A (Tc) 49mOhm @ 50A, 10V 10V 6.5V @ 8mA 255nC @ 10V 13800pF @ 25V ±30V HiPerFET™
IXFN400N15X3 MOSFET N-CH IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 695W (Tc) 150V 400A (Tc) 2.5mOhm @ 200A, 10V 10V 4.5V @ 8mA 365nC @ 10V 23700pF @ 25V ±20V HiPerFET™
IXFN24N100F MOSFET N-CH 1000V 24A SOT227B IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 600W (Tc) 1000V 24A (Tc) 390mOhm @ 12A, 10V 10V 5.5V @ 8mA 195nC @ 10V 6600pF @ 25V ±20V HiPerRF™
IXFN66N85X 850V/65A ULTRA JUNCTION X-CLASS IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 830W (Tc) 850V 65A (Tc) 65mOhm @ 33A, 10V 10V 5.5V @ 8mA 230nC @ 10V 8900pF @ 25V ±30V HiPerFET™
IXFN520N075T2 MOSFET N-CH 75V 480A SOT227 IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 940W (Tc) 75V 480A (Tc) 1.9mOhm @ 100A, 10V 10V 5V @ 8mA 545nC @ 10V 41000pF @ 25V ±20V GigaMOS™, HiPerFET™, TrenchT2™
IXFN200N10P MOSFET N-CH 100V 200A SOT-227B IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 680W (Tc) 100V 200A (Tc) 7.5mOhm @ 500mA, 10V 10V 5V @ 8mA 235nC @ 10V 7600pF @ 25V ±20V Polar™
IXFN62N80Q3 MOSFET N-CH 800V 49A SOT-227 IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 960W (Tc) 800V 49A (Tc) 140mOhm @ 31A, 10V 10V 6.5V @ 8mA 270nC @ 10V 13600pF @ 25V ±30V HiPerFET™
IXFN48N50Q MOSFET N-CH 500V 48A SOT-227B IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 500W (Tc) 500V 48A (Tc) 100mOhm @ 500mA, 10V 10V 4V @ 4mA 190nC @ 10V 7000pF @ 25V ±20V HiPerFET™
IXFN180N25T MOSFET N-CH 250V 168A SOT-227 IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 900W (Tc) 250V 168A (Tc) 12.9mOhm @ 60A, 10V 10V 5V @ 8mA 345nC @ 10V 28000pF @ 25V ±20V GigaMOS™
IXTN210P10T MOSFET P-CH 100V 210A SOT-227 IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 830W (Tc) 100V 210A (Tc) 7.5mOhm @ 105A, 10V 10V 4.5V @ 250µA 740nC @ 10V 69500pF @ 25V ±15V TrenchP™
IXUN280N10 MOSFET N-CH 100V 280A SOT-227B IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 770W (Tc) 100V 280A (Tc) 5mOhm @ 140A, 10V 10V 4V @ 4mA 440nC @ 10V 18000pF @ 25V ±20V
IXFN100N10S2 MOSFET N-CH 100V 100A SOT-227B IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) N-Channel 360W (Tc) 100V 100A (Tc) 15mOhm @ 500mA, 10V 10V 4V @ 4mA 180nC @ 10V 4500pF @ 25V ±20V HiPerFET™
IXFN44N100P MOSFET N-CH 1000V 37A SOT-227B IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 890W (Tc) 1000V 37A (Tc) 220mOhm @ 22A, 10V 10V 6.5V @ 1mA 305nC @ 10V 19000pF @ 25V ±30V Polar™
IXTN600N04T2 MOSFET N-CH 40V 600A SOT-227 IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 940W (Tc) 40V 600A (Tc) 1.05mOhm @ 100A, 10V 10V 3.5V @ 250µA 590nC @ 10V 40000pF @ 25V ±20V GigaMOS™, TrenchT2™