-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFR180N085 | MOSFET N-CH 85V 180A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 400W (Tc) | 85V | 180A (Tc) | 7mOhm @ 500mA, 10V | 10V | 4V @ 8mA | 320nC @ 10V | 9100pF @ 25V | ±20V | HiPerFET™ | |
| IXFR58N20 | MOSFET N-CH 200V 50A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 200V | 50A (Tc) | 40mOhm @ 29A, 10V | 10V | 4V @ 4mA | 140nC @ 10V | 3600pF @ 25V | ±20V | HiPerFET™ | |
| IXFR21N100Q | MOSFET N-CH 1KV 18A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 350W (Tc) | 1000V | 18A (Tc) | 500mOhm @ 10.5A, 10V | 10V | 5V @ 4mA | 170nC @ 10V | 5900pF @ 25V | ±20V | HiPerFET™ | |
| IXFR80N60P3 | MOSFET N-CH 600V 48A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 540W (Tc) | 600V | 48A (Tc) | 76mOhm @ 40A, 10V | 10V | 5V @ 8mA | 190nC @ 10V | 13100pF @ 25V | ±30V | HiPerFET™, Polar3™ | |
| IXFR12N100Q | MOSFET N-CH 1000V 10A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 250W (Tc) | 1000V | 10A (Tc) | 1.1Ohm @ 6A, 10V | 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | ±20V | HiPerFET™ | |
| IXFR12N100 | MOSFET N-CH 1000V 10A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | N-Channel | 1000V | 10A (Tc) | 1.1Ohm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | HiPerFET™ | |||||
| IXFR230N20T | MOSFET N-CH 200V 156A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 600W (Tc) | 200V | 156A (Tc) | 8mOhm @ 60A, 10V | 10V | 5V @ 8mA | 378nC @ 10V | 28000pF @ 25V | ±20V | GigaMOS™ | |
| IXFR18N90P | MOSFET N-CH 900V ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 200W (Tc) | 900V | 10.5A (Tc) | 660mOhm @ 9A, 10V | 10V | 6V @ 1mA | 97nC @ 10V | 5230pF @ 25V | ±30V | HiPerFET™, PolarP2™ | |
| IXFR32N100P | MOSFET N-CH 1000V 18A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 320W (Tc) | 1000V | 18A (Tc) | 340mOhm @ 16A, 10V | 10V | 6.5V @ 1mA | 225nC @ 10V | 14200pF @ 25V | ±30V | HiPerFET™, PolarP2™ | |
| IXFR10N100Q | MOSFET N-CH 1000V 9A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 250W (Tc) | 1000V | 9A (Tc) | 1.2Ohm @ 5A, 10V | 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | ±20V | HiPerFET™ |
- 10
- 15
- 50
- 100