- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
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IXFP18N65X2M | DISCMSFT NCHULTRAJNCTX2CLASS TO- | IXYS | TO-220 Isolated Tab | Through Hole | TO-220-3 Full Pack, Isolated Tab | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 290W (Tc) | 650V | 18A (Tc) | 200mOhm @ 9A, 10V | 10V | 5V @ 1.5mA | 29nC @ 10V | 1520pF @ 25V | ±30V | ||||||||||
IXTH130N15T | MOSFET N-CH 150V 130A TO-247 | IXYS | TO-247 (IXTH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 750W (Tc) | 150V | 130A (Tc) | 12mOhm @ 65A, 10V | 10V | 4.5V @ 1mA | 113nC @ 10V | 9800pF @ 25V | ±30V | TrenchHV™ | |||||||||
IXFT30N85XHV | MOSFET N-CH 850V 30A TO268 | IXYS | TO-268 (IXFT) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 695W (Tc) | 850V | 30A (Tc) | 220mOhm @ 500mA, 10V | 10V | 5.5V @ 2.5mA | 68nC @ 10V | 2460pF @ 25V | ±30V | HiPerFET™ | |||||||||
IXFR40N50Q2 | MOSFET N-CH 500V 29A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 320W (Tc) | 500V | 29A (Tc) | 170mOhm @ 20A, 10V | 10V | 5V @ 4mA | 110nC @ 10V | 4200pF @ 25V | ±30V | HiPerFET™ | |||||||||
IXTA3N50D2-TRL | IXTA3N50D2 TRL | IXYS | TO-263 (IXTA) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 500V | 3A (Tj) | Depletion Mode | 1.5Ohm @ 1.5A, 0V | 0V | 4.5V @ 250µA | 40nC @ 5V | 1070pF @ 25V | ±20V | |||||||||
IXFR24N90P | MOSFET N-CH 900V 13A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 230W (Tc) | 900V | 13A (Tc) | 460mOhm @ 12A, 10V | 10V | 6.5V @ 1mA | 130nC @ 10V | 7200pF @ 25V | ±30V | HiPerFET™, PolarP2™ | |||||||||
IXFB30N120Q2 | MOSFET N-CH 1200V 30A PLUS264 | IXYS | ISOPLUS264™ | Through Hole | ISOPLUS264™ | MOSFET (Metal Oxide) | N-Channel | 1200V | 30A (Tc) | ||||||||||||||||||
IXFD14N100-8X | MOSFET N-CHANNEL 1000V DIE | IXYS | Die | Die | MOSFET (Metal Oxide) | N-Channel | 1000V | HiPerFET™ | |||||||||||||||||||
IXFB82N60Q3 | MOSFET N-CH 600V 82A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1560W (Tc) | 600V | 82A (Tc) | 75mOhm @ 41A, 10V | 10V | 6.5V @ 8mA | 275nC @ 10V | 13500pF @ 25V | ±30V | HiPerFET™ | |||||||||
IXTP8N70X2 | MOSFET N-CHANNEL 700V 8A TO220 | IXYS | TO-220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 150W (Tc) | 700V | 8A (Tc) | 500mOhm @ 500mA, 10V | 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 10V | ±30V | ||||||||||
IXFN56N90P | MOSFET N-CH 900V 56A SOT-227B | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1000W (Tc) | 900V | 56A (Tc) | 135mOhm @ 28A, 10V | 10V | 6.5V @ 3mA | 375nC @ 10V | 23000pF @ 25V | ±30V | Polar™ | |||||||||
IXFA50N20X3 | DISCMSFT NCHULTRJNCTN X3CLASS TO | IXYS | TO-263 (IXFA) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 240W (Tc) | 200V | 50A (Tc) | 30mOhm @ 25A, 10V | 10V | 4.5V @ 1mA | 33nC @ 10V | 2100pF @ 25V | ±20V | ||||||||||
FMD47-06KC5 | MOSFET N-CH 600V 47A I4-PAC-5 | IXYS | ISOPLUS i4-PAC™ | Through Hole | ISOPLUSi5-Pak™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 600V | 47A (Tc) | 45mOhm @ 44A, 10V | 10V | 3.5V @ 3mA | 190nC @ 10V | 6800pF @ 100V | ±20V | CoolMOS™ | ||||||||||
IXFK170N20T | MOSFET N-CH 200V 170A TO-264 | IXYS | TO-264AA (IXFK) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1150W (Tc) | 200V | 170A (Tc) | 11mOhm @ 60A, 10V | 10V | 5V @ 4mA | 265nC @ 10V | 19600pF @ 25V | ±20V | GigaMOS™ | |||||||||
IXFH20N100P | MOSFET N-CH 1000V 20A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 660W (Tc) | 1000V | 20A (Tc) | 570mOhm @ 10A, 10V | 10V | 6.5V @ 1mA | 126nC @ 10V | 7300pF @ 25V | ±30V | HiPerFET™, PolarP2™ |
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