• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
Найдено: 2430
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Выходная мощность
Вид монтажа
Частота
Номинальное напряжение
Номинальный ток
Package / Case
Тип транзистора
Технология
Рабочая температура
Тип канала
Усиление
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Voltage - Test
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IXFH140N20X3 200V/140A ULTRA JUNCTION X3-CLAS IXYS TO-247 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 520W (Tc) 200V 140A (Tc) 9.6mOhm @ 70A, 10V 10V 4.5V @ 4mA 127nC @ 10V 7660pF @ 25V ±20V HiPerFET™
IXFR9N80Q MOSFET N-CH 800V ISOPLUS247 IXYS ISOPLUS247™ Through Hole ISOPLUS247™ MOSFET (Metal Oxide) N-Channel 800V
IXTA48P05T MOSFET P-CH 50V 48A TO-263 IXYS TO-263 (IXTA) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 150W (Tc) 50V 48A (Tc) 30mOhm @ 24A, 10V 10V 4.5V @ 250µA 53nC @ 10V 3660pF @ 25V ±15V TrenchP™
IXFH20N85X 850V/20A ULTRA JUNCTION X-CLASS IXYS TO-247 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 540W (Tc) 850V 20A (Tc) 330mOhm @ 500mA, 10V 10V 5.5V @ 2.5mA 63nC @ 10V 1660pF @ 25V ±30V HiPerFET™
IXFH14N60P3 MOSFET N-CH 600V 14A TO-247 IXYS TO-247AD (IXFH) Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 327W (Tc) 600V 14A (Tc) 540mOhm @ 7A, 10V 10V 5V @ 1mA 25nC @ 10V 1480pF @ 25V ±30V HiPerFET™, Polar3™
IXFX180N15P MOSFET N-CH 150V 180A PLUS 247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 830W (Tc) 150V 180A (Tc) 11mOhm @ 90A, 10V 10V 5V @ 4mA 240nC @ 10V 7000pF @ 25V ±20V HiPerFET™, PolarP2™
IXFE44N60 MOSFET N-CH 600V 41A SOT-227B IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 500W (Tc) 600V 41A (Tc) 130mOhm @ 22A, 10V 10V 4.5V @ 8mA 330nC @ 10V 8900pF @ 25V ±20V HiPerFET™
IXFL40N110P MOSFET N-CH 1100V 21A ISOPLUS264 IXYS ISOPLUS264™ Through Hole ISOPLUS264™ MOSFET (Metal Oxide) N-Channel 1100V 21A (Tc) 280mOhm @ 20A, 10V 10V 6.5V @ 1mA 310nC @ 10V 19000pF @ 25V ±30V HiPerFET™, PolarP2™
IXTP1N120P MOSFET N-CH 1200V 1A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 63W (Tc) 1200V 1A (Tc) 20Ohm @ 500mA, 10V 10V 4.5V @ 50µA 17.6nC @ 10V 550pF @ 25V ±20V PolarVHV™
IXTP170N075T2 MOSFET N-CH 75V 170A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 360W (Tc) 75V 170A (Tc) 5.4mOhm @ 50A, 10V 10V 4V @ 250µA 109nC @ 10V 6860pF @ 25V ±20V TrenchT2™
IXFT30N50 MOSFET N-CH 500V 30A TO-268 IXYS TO-268 Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 360W (Tc) 500V 30A (Tc) 160mOhm @ 15A, 10V 10V 4V @ 4mA 300nC @ 10V 5700pF @ 25V ±20V HiPerFET™
IXTA50N25T-TRL IXTA50N25T TRL IXYS TO-263 (IXTA) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 400W (Tc) 250V 50A (Tc) 50mOhm @ 25A, 10V 10V 5V @ 1mA 78nC @ 10V 4000pF @ 25V ±30V
IXFH21N50Q MOSFET N-CH 500V 21A TO-247 IXYS TO-247AD (IXFH) Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 280W (Tc) 500V 21A (Tc) 250mOhm @ 10.5A, 10V 10V 4.5V @ 4mA 84nC @ 10V 3000pF @ 25V ±30V HiPerFET™
IXTP06N120P MOSFET N-CH 1200V 600MA TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 42W (Tc) 1200V 600mA (Tc) 32Ohm @ 500mA, 10V 10V 4.5V @ 50µA 13.3nC @ 10V 270pF @ 25V ±20V PolarVHV™
IXTP3N120 MOSFET N-CH 1.2KV 3A TO-220AB IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 200W (Tc) 1200V 3A (Tc) 4.5Ohm @ 500mA, 10V 10V 5V @ 250µA 42nC @ 10V 1350pF @ 25V ±20V HiPerFET™