- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTP140P05T | MOSFET P-CH 50V 140A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 298W (Tc) | 50V | 140A (Tc) | 9mOhm @ 70A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 13500pF @ 25V | ±15V | TrenchP™ | |||||||||
| IXFX210N17T | MOSFET N-CH 170V 210A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1150W (Tc) | 170V | 210A (Tc) | 7.5mOhm @ 60A, 10V | 10V | 5V @ 4mA | 285nC @ 10V | 18800pF @ 25V | ±20V | GigaMOS™ | |||||||||
| IXFA130N15X3 | MOSFET N-CH | IXYS | TO-263AA | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 390W (Tc) | 150V | 130A (Tc) | 9mOhm @ 65A, 10V | 10V | 4.5V @ 1.5mA | 80nC @ 10V | 5230pF @ 25V | ±20V | HiPerFET™ | |||||||||
| IXFT74N20 | MOSFET N-CH 200V 74A TO-268 | IXYS | TO-268 | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 200V | 74A (Tc) | 30mOhm @ 500mA, 10V | 10V | 4V @ 4mA | 280nC @ 10V | 5400pF @ 25V | ±20V | HiPerFET™ | |||||||||
| IXFQ14N80P | MOSFET N-CH 800V 14A TO-3P | IXYS | TO-3P | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 400W (Tc) | 800V | 14A (Tc) | 720mOhm @ 500mA, 10V | 10V | 5.5V @ 4mA | 61nC @ 10V | 3900pF @ 25V | ±30V | HiPerFET™, PolarHT™ | |||||||||
| FMM50-025TF | MOSFET 2N-CH 250V 30A I4-PAC | IXYS | ISOPLUS i4-PAC™ | 125W | Through Hole | i4-Pac™-5 | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 250V | 30A | Standard | 50mOhm @ 25A, 10V | 4.5V @ 250µA | 78nC @ 10V | 4000pF @ 25V | HiPerFET™ | |||||||||||
| IXTH13N110 | MOSFET N-CH 1.1KV 13A TO-247AD | IXYS | TO-247 (IXTH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 1100V | 13A (Tc) | 920mOhm @ 500mA, 10V | 10V | 4.5V @ 250µA | 195nC @ 10V | 5650pF @ 25V | ±20V | MegaMOS™ | |||||||||
| IXFB210N30P3 | MOSFET N-CH 300V 210A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1890W (Tc) | 300V | 210A (Tc) | 14.5mOhm @ 105A, 10V | 10V | 5V @ 8mA | 268nC @ 10V | 16200pF @ 25V | ±20V | HiPerFET™, Polar3™ | |||||||||
| IXFH16N120P | MOSFET N-CH 1200V 16A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 660W (Tc) | 1200V | 16A (Tc) | 950mOhm @ 8A, 10V | 10V | 6.5V @ 1mA | 120nC @ 10V | 6900pF @ 25V | ±30V | HiPerFET™, PolarP2™ | |||||||||
| IXFR80N15Q | MOSFET N-CH 150V 75A ISOPLUS247 | IXYS | ISOPLUS247™ | Through Hole | ISOPLUS247™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 310W (Tc) | 150V | 75A (Tc) | 22.5mOhm @ 40A, 10V | 10V | 4V @ 4mA | 180nC @ 10V | 4600pF @ 25V | ±20V | HiPerFET™ | |||||||||
| IXFE48N50QD3 | MOSFET N-CH 500V 41A SOT-227B | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 400W (Tc) | 500V | 41A (Tc) | 110mOhm @ 24A, 10V | 10V | 4V @ 4mA | 190nC @ 10V | 8000pF @ 25V | ±20V | HiPerFET™ | |||||||||
| MTC120WX75GD-SMD | IGBT MOD MOSFET SIXPACK ISOPLUS | IXYS | ISOPLUS-DIL™ | Surface Mount | ISOPLUS-DIL™ | -55°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 75V | 180A (Tc) | Standard | 3.1mOhm @ 100A, 10V | 4V @ 1mA | 178nC @ 10V | 10500pF @ 25V | |||||||||||||
| IXTN660N04T4 | 40V/660A TRENCHT4 PWR MOSFET SOT | IXYS | SOT-227B | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1040W (Tc) | 40V | 660A (Tc) | Current Sensing | 0.85mOhm @ 100A, 10V | 10V | 4V @ 250µA | 860nC @ 10V | 44000pF @ 25V | ±15V | TrenchT4™ | ||||||||
| IXFV30N60PS | MOSFET N-CH 600V 30A PLUS220-SMD | IXYS | PLUS-220SMD | Surface Mount | PLUS-220SMD | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500W (Tc) | 600V | 30A (Tc) | 240mOhm @ 15A, 10V | 10V | 5V @ 4mA | 82nC @ 10V | 4000pF @ 25V | ±30V | HiPerFET™, PolarHT™ | |||||||||
| IXFB82N60P | MOSFET N-CH 600V 82A PLUS 264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 600V | 82A (Tc) | 75mOhm @ 41A, 10V | 10V | 5V @ 8mA | 240nC @ 10V | 23000pF @ 25V | ±30V | HiPerFET™, PolarHT™ |
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