• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
Найдено: 2430
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Выходная мощность
Вид монтажа
Частота
Номинальное напряжение
Номинальный ток
Package / Case
Тип транзистора
Технология
Рабочая температура
Тип канала
Усиление
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Voltage - Test
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IXKT70N60C5-TRL MOSFET P-CH 600V 68A TO-268 IXYS
IXTP90N055T MOSFET N-CH 55V 90A TO-220 IXYS TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 176W (Tc) 55V 90A (Tc) 8.8mOhm @ 25A, 10V 10V 4V @ 50µA 61nC @ 10V 2500pF @ 25V ±20V TrenchT2™
IXFN24N90Q MOSFET N-CH 900V 24A SOT-227B IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) N-Channel 500W (Tc) 900V 24A (Tc)
IXTP230N04T4M MOSFET N-CH IXYS TO-220 Isolated Tab Through Hole TO-220-3 Full Pack, Isolated Tab MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 40W (Tc) 40V 230A (Tc) 2.9mOhm @ 115A, 10V 10V 4V @ 250µA 140nC @ 10V 7400pF @ 25V ±15V TrenchT4™
IXFJ32N50 MOSFET N-CH TO-220 IXYS
IXFN200N07 MOSFET N-CH 70V 200A SOT-227B IXYS SOT-227B Chassis Mount SOT-227-4, miniBLOC MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 520W (Tc) 70V 200A (Tc) 6mOhm @ 500mA, 10V 10V 4V @ 8mA 480nC @ 10V 9000pF @ 25V ±20V HiPerFET™
IXTA4N150HV-TRL IXTA4N150HV TRL IXYS TO-263HV Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 280W (Tc) 1500V 4A (Tc) 6Ohm @ 2A, 10V 10V 5V @ 250µA 44.5nC @ 10V 1576pF @ 25V ±30V
GWM180-004X2-SMD MOSFET 6N-CH 40V 180A 17-SMD IXYS ISOPLUS-DIL™ Surface Mount 17-SMD, Gull Wing -55°C ~ 175°C (TJ) 6 N-Channel (3-Phase Bridge) 40V 180A Standard 2.5mOhm @ 100A, 10V 4.5V @ 1mA 110nC @ 10V
IXTT440N04T4HV 40V/440A TRENCHT4 PWR MOSFET TO- IXYS TO-268 Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 940W (Tc) 40V 440A (Tc) 1.25mOhm @ 100A, 10V 10V 4V @ 250µA 480nC @ 10V 26000pF @ 25V ±15V TrenchT4™
IXTY8N65X2 MOSFET N-CH 650V 8A X2 TO-252 IXYS TO-252 Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 150W (Tc) 650V 8A (Tc) 500mOhm @ 4A, 10V 10V 5V @ 250µA 12nC @ 10V 800pF @ 25V ±30V
IXTH160N10T MOSFET N-CH 100V 160A TO-247 IXYS TO-247 (IXTH) Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 430W (Tc) 100V 160A (Tc) 7mOhm @ 25A, 10V 10V 4.5V @ 250µA 132nC @ 10V 6600pF @ 25V ±30V TrenchMV™
IXFK73N30 MOSFET N-CH 300V 73A TO-264AA IXYS TO-264AA (IXFK) Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 500W (Tc) 300V 73A (Tc) 45mOhm @ 500mA, 10V 10V 4V @ 8mA 360nC @ 10V 9000pF @ 25V ±20V HiPerFET™
IXFK55N50 MOSFET N-CH 500V 55A TO-264AA IXYS TO-264AA (IXFK) Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 625W (Tc) 500V 55A (Tc) 90mOhm @ 27.5A, 10V 10V 4.5V @ 8mA 330nC @ 10V 9400pF @ 25V ±20V HiPerFET™
IXTK17N120L MOSFET N-CH 1200V 17A TO-264 IXYS TO-264 (IXTK) Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 700W (Tc) 1200V 17A (Tc) 900mOhm @ 8.5A, 20V 20V 5V @ 250µA 155nC @ 15V 8300pF @ 25V ±30V
IXTM9226 POWER MOSFET TO-3 IXYS