-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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| IPB65R420CFDATMA1 | MOSFET N-CH 650V 8.7A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 83.3W (Tc) | 650V | 8.7A (Tc) | 420mOhm @ 3.4A, 10V | 10V | 4.5V @ 340µA | 32nC @ 10V | 870pF @ 100V | ±20V | CoolMOS™ |
| IPB048N15N5LFATMA1 | MOSFET N-CH 150V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 313W (Tc) | 150V | 120A | 4.8mOhm @ 100A, 10V | 10V | 4.9V @ 255µA | 84nC @ 10V | 380pF @ 75V | ±20V | OptiMOS™-5 |
| IPB107N20N3GATMA1 | MOSFET N-CH 200V 88A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 200V | 88A (Tc) | 10.7mOhm @ 88A, 10V | 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | ±20V | OptiMOS™ |
| IPB120N10S405ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 190W (Tc) | 100V | 120A (Tc) | 5mOhm @ 100A, 10V | 10V | 3.5V @ 120µA | 91nC @ 10V | 6540pF @ 25V | ±20V | Automotive, AEC-Q101, OptiMOS™ |
| IPB019N06L3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 250W (Tc) | 60V | 120A (Tc) | 1.9mOhm @ 100A, 10V | 4.5V, 10V | 2.2V @ 196µA | 166nC @ 4.5V | 28000pF @ 30V | ±20V | OptiMOS™ |
| IPB022N04LGATMA1 | MOSFET N-CH 40V 90A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 167W (Tc) | 40V | 90A (Tc) | 2.2mOhm @ 90A, 10V | 4.5V, 10V | 2V @ 95µA | 166nC @ 10V | 13000pF @ 20V | ±20V | OptiMOS™ |
| IPB26CN10NGATMA1 | MOSFET N-CH 100V 35A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 71W (Tc) | 100V | 35A (Tc) | 26mOhm @ 35A, 10V | 10V | 4V @ 39µA | 31nC @ 10V | 2070pF @ 50V | ±20V | OptiMOS™ |
| IPB60R280C6ATMA1 | MOSFET N-CH 600V 13.8A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104W (Tc) | 600V | 13.8A (Tc) | 280mOhm @ 6.5A, 10V | 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | ±20V | CoolMOS™ |
| IPB096N03LGATMA1 | MOSFET N-CH 30V 35A TO-263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 42W (Tc) | 30V | 35A (Tc) | 9.6mOhm @ 30A, 10V | 4.5V, 10V | 2.2V @ 250µA | 15nC @ 10V | 1600pF @ 15V | ±20V | OptiMOS™ |
| IRFS4229TRLPBF | MOSFET N-CH 250V 45A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | N-Channel | 330W (Tc) | 250V | 45A (Tc) | 48mOhm @ 26A, 10V | 10V | 5V @ 250µA | 110nC @ 10V | 4560pF @ 25V | ±30V | HEXFET® |
| IPB123N10N3GATMA1 | MOSFET N-CH 100V 58A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 94W (Tc) | 100V | 58A (Tc) | 12.3mOhm @ 46A, 10V | 6V, 10V | 3.5V @ 46µA | 35nC @ 10V | 2500pF @ 50V | ±20V | OptiMOS™ |
| IPB08CNE8N G | MOSFET N-CH 85V 95A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 167W (Tc) | 85V | 95A (Tc) | 8.2mOhm @ 95A, 10V | 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | ±20V | OptiMOS™ |
| IPB120N04S402ATMA1 | MOSFET N-CH 40V 120A TO263-3-2 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 158W (Tc) | 40V | 120A (Tc) | 1.8mOhm @ 100A, 10V | 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | ±20V | OptiMOS™ |
| AUIRF4905STRL | MOSFET P-CH 55V 42A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 200W (Tc) | 55V | 42A (Tc) | 20mOhm @ 42A, 10V | 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | ±20V | Automotive, AEC-Q101, HEXFET® |
| IPB029N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 188W (Tc) | 60V | 120A (Tc) | 2.9mOhm @ 100A, 10V | 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | ±20V | OptiMOS™ |
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