-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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| IPB027N10N5ATMA1 | MOSFET N-CH 100V 120A D2PAK-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 250W (Tc) | 100V | 120A (Tc) | 2.7mOhm @ 100A, 10V | 6V, 10V | 3.8V @ 184µA | 139nC @ 10V | 10300pF @ 50V | ±20V | OptiMOS™ |
| IPB048N06LGATMA1 | MOSFET N-CH 60V 100A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 60V | 100A (Tc) | 4.4mOhm @ 100A, 10V | 4.5V, 10V | 2V @ 270µA | 225nC @ 10V | 7600pF @ 30V | ±20V | OptiMOS™ |
| IRF100S201 | MOSFET N-CH 100V 192A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 441W (Tc) | 100V | 192A (Tc) | 4.2mOhm @ 115A, 10V | 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | ±20V | HEXFET®, StrongIRFET™ |
| IPB034N06L3GATMA1 | MOSFET N-CH 60V 90A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 167W (Tc) | 60V | 90A (Tc) | 3.4mOhm @ 90A, 10V | 4.5V, 10V | 2.2V @ 93µA | 79nC @ 4.5V | 13000pF @ 30V | ±20V | OptiMOS™ |
| IPB049N08N5ATMA1 | MOSFET N-CH 80V TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 125W (Tc) | 80V | 80A (Tc) | 4.9mOhm @ 80A, 10V | 6V, 10V | 3.8V @ 66µA | 53nC @ 10V | 3770pF @ 40V | ±20V | OptiMOS™ |
| IPB65R150CFDAATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 195.3W (Tc) | 650V | 22.4A (Tc) | 150mOhm @ 9.3A, 10V | 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | ±20V | Automotive, AEC-Q101, CoolMOS™ |
| IPB60R600P6ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 63W (Tc) | 600V | 7.3A (Tc) | 600mOhm @ 2.4A, 10V | 10V | 4.5V @ 200µA | 12nC @ 10V | 557pF @ 100V | ±20V | CoolMOS™ P6 |
| IPB60R160P6ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 176W (Tc) | 600V | 23.8A (Tc) | 160mOhm @ 9A, 10V | 10V | 4.5V @ 750µA | 44nC @ 10V | 2080pF @ 100V | ±20V | CoolMOS™ P6 |
| IPB65R280C6ATMA1 | MOSFET N-CH 650V 13.8A TO263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104W (Tc) | 650V | 13.8A (Tc) | 280mOhm @ 4.4A, 10V | 10V | 3.5V @ 440µA | 45nC @ 10V | 950pF @ 100V | ±20V | CoolMOS™ |
| IPB147N03LGATMA1 | MOSFET N-CH 30V 20A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 31W (Tc) | 30V | 20A (Tc) | 14.7mOhm @ 20A, 10V | 4.5V, 10V | 2.2V @ 250µA | 10nC @ 10V | 1000pF @ 15V | ±20V | OptiMOS™ |
| IPB081N06L3GATMA1 | MOSFET N-CH 60V 50A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 79W (Tc) | 60V | 50A (Tc) | 8.1mOhm @ 50A, 10V | 4.5V, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | ±20V | OptiMOS™ |
| IPB60R080P7ATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 129W (Tc) | 650V | 37A (Tc) | 80mOhm @ 11.8A, 10V | 10V | 4V @ 590µA | 51nC @ 10V | 2180pF @ 400V | ±20V | CoolMOS™ P7 |
| IPB021N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 250W (Tc) | 60V | 120A (Tc) | 2.1mOhm @ 100A, 10V | 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | ±20V | OptiMOS™ |
| IPB080N03LGATMA1 | MOSFET N-CH 30V 50A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 47W (Tc) | 30V | 50A (Tc) | 8mOhm @ 30A, 10V | 4.5V, 10V | 2.2V @ 250µA | 18nC @ 10V | 1900pF @ 15V | ±20V | OptiMOS™ |
| IPB65R190CFDAATMA1 | MOSFET N-CH TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 151W (Tc) | 650V | 17.5A (Tc) | 190mOhm @ 7.3A, 10V | 10V | 4.5V @ 700µA | 68nC @ 10V | 1850pF @ 100V | ±20V | Automotive, AEC-Q101, CoolMOS™ |
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