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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
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Вид монтажа
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Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
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Rds On (Max) @ Id, Vgs
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Drive Voltage (Max Rds On, Min Rds On)
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
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Серия
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IRF7750GTRPBF | MOSFET 2P-CH 20V 4.7A 8TSSOP | Infineon Technologies | 8-TSSOP | 1W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4.7A | Logic Level Gate | 30mOhm @ 4.7A, 4.5V | 1.2V @ 250µA | 39nC @ 5V | 1700pF @ 15V | HEXFET® | ||||
IRF7755TRPBF | MOSFET 2P-CH 20V 3.9A 8TSSOP | Infineon Technologies | 8-TSSOP | 1W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 3.9A | Logic Level Gate | 51mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | HEXFET® | ||||
IRF7705GTRPBF | MOSFET P-CH 30V 8A 8-TSSOP | Infineon Technologies | 8-TSSOP | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.5W (Ta) | 30V | 8A (Ta) | 18mOhm @ 8A, 10V | 4.5V, 10V | 2.5V @ 250µA | 88nC @ 10V | 2774pF @ 25V | ±20V | HEXFET® | ||
IRF7757TRPBF | MOSFET 2N-CH 20V 4.8A 8TSSOP | Infineon Technologies | 8-TSSOP | 1.2W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 4.8A | Logic Level Gate | 35mOhm @ 4.8A, 4.5V | 1.2V @ 250µA | 23nC @ 4.5V | 1340pF @ 15V | HEXFET® | ||||
IRF7752TRPBF | MOSFET 2N-CH 30V 4.6A 8TSSOP | Infineon Technologies | 8-TSSOP | 1W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 4.6A | Logic Level Gate | 30mOhm @ 4.6A, 10V | 2V @ 250µA | 9nC @ 4.5V | 861pF @ 25V | HEXFET® | ||||
IRF7751TRPBF | MOSFET 2P-CH 30V 4.5A 8TSSOP | Infineon Technologies | 8-TSSOP | 1W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 4.5A | Logic Level Gate | 35mOhm @ 4.5A, 10V | 2.5V @ 250µA | 44nC @ 10V | 1464pF @ 25V | HEXFET® | ||||
IRF7755TR | MOSFET 2P-CH 20V 3.9A 8-TSSOP | Infineon Technologies | 8-TSSOP | 1W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 3.9A | Logic Level Gate | 51mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | HEXFET® | ||||
IRF7757TR | MOSFET 2N-CH 20V 4.8A TSSOP-8 | Infineon Technologies | 8-TSSOP | 1.2W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 4.8A | Logic Level Gate | 35mOhm @ 4.8A, 4.5V | 1.2V @ 250µA | 23nC @ 4.5V | 1340pF @ 15V | HEXFET® | ||||
IRF7700GTRPBF | MOSFET P-CH 20V 8.6A 8-TSSOP | Infineon Technologies | 8-TSSOP | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.5W (Ta) | 20V | 8.6A (Ta) | 15mOhm @ 8.6A, 4.5V | 2.5V, 4.5V | 1.2V @ 250µA | 89nC @ 5V | 4300pF @ 15V | ±12V | HEXFET® | ||
IRF7755 | MOSFET 2P-CH 20V 3.9A 8-TSSOP | Infineon Technologies | 8-TSSOP | 1W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 3.9A | Logic Level Gate | 51mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | HEXFET® | ||||
IRF7707TR | MOSFET P-CH 20V 7A 8-TSSOP | Infineon Technologies | 8-TSSOP | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.5W (Ta) | 20V | 7A (Ta) | 22mOhm @ 7A, 4.5V | 2.5V, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | 2361pF @ 15V | ±12V | HEXFET® | ||
IRF7706TR | MOSFET P-CH 30V 7A 8-TSSOP | Infineon Technologies | 8-TSSOP | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.51W (Ta) | 30V | 7A (Ta) | 22mOhm @ 7A, 10V | 4.5V, 10V | 2.5V @ 250µA | 72nC @ 10V | 2211pF @ 25V | ±20V | HEXFET® | ||
IRF7752TR | MOSFET 2N-CH 30V 4.6A 8-TSSOP | Infineon Technologies | 8-TSSOP | 1W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 4.6A | Logic Level Gate | 30mOhm @ 4.6A, 10V | 2V @ 250µA | 9nC @ 4.5V | 861pF @ 25V | HEXFET® | ||||
IRF7754TR | MOSFET 2P-CH 12V 5.5A 8-TSSOP | Infineon Technologies | 8-TSSOP | 1W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 12V | 5.5A | Logic Level Gate | 25mOhm @ 5.4A, 4.5V | 900mV @ 250µA | 22nC @ 4.5V | 1984pF @ 6V | HEXFET® |
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