• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
  • 10
  • 15
  • 50
  • 100
Списком Таблицей
Найдено: 59
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IRF7750TRPBF MOSFET 2P-CH 20V 4.7A 8TSSOP Infineon Technologies 8-TSSOP 1W Surface Mount 8-TSSOP (0.173", 4.40mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 4.7A Logic Level Gate 30mOhm @ 4.7A, 4.5V 1.2V @ 250µA 39nC @ 5V 1700pF @ 15V HEXFET®
IRF7701 MOSFET P-CH 12V 10A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.5W (Ta) 12V 10A (Tc) 11mOhm @ 10A, 4.5V 1.8V, 4.5V 1.2V @ 250µA 100nC @ 4.5V 5050pF @ 10V ±8V HEXFET®
IRF7700TRPBF MOSFET P-CH 20V 8.6A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.5W (Tc) 20V 8.6A (Tc) 15mOhm @ 8.6A, 4.5V 2.5V, 4.5V 1.2V @ 250µA 89nC @ 5V 4300pF @ 15V ±12V HEXFET®
IRF7703 MOSFET P-CH 40V 6A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.5W (Ta) 40V 6A (Ta) 28mOhm @ 6A, 10V 4.5V, 10V 3V @ 250µA 62nC @ 4.5V 5220pF @ 25V ±20V HEXFET®
IRF7705TR MOSFET P-CH 30V 8A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.5W (Tc) 30V 8A (Tc) 18mOhm @ 8A, 10V 4.5V, 10V 2.5V @ 250µA 88nC @ 10V 2774pF @ 25V ±20V HEXFET®
IRF7755GTRPBF MOSFET 2P-CH 20V 3.9A 8TSSOP Infineon Technologies 8-TSSOP 1W Surface Mount 8-TSSOP (0.173", 4.40mm Width) 2 P-Channel (Dual) 20V 3.9A Logic Level Gate 51mOhm @ 3.7A, 4.5V 1.2V @ 250µA 17nC @ 4.5V 1090pF @ 15V HEXFET®
IRF7756GTRPBF MOSFET 2P-CH 12V 4.3A 8TSSOP Infineon Technologies 8-TSSOP 1W Surface Mount 8-TSSOP (0.173", 4.40mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 12V 4.3A Logic Level Gate 40mOhm @ 4.3A, 4.5V 900mV @ 250µA 18nC @ 4.5V 1400pF @ 10V HEXFET®
IRF7706 MOSFET P-CH 30V 7A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.51W (Ta) 30V 7A (Ta) 22mOhm @ 7A, 10V 4.5V, 10V 2.5V @ 250µA 72nC @ 10V 2211pF @ 25V ±20V HEXFET®
IRF7703TR MOSFET P-CH 40V 6A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.5W (Ta) 40V 6A (Ta) 28mOhm @ 6A, 10V 4.5V, 10V 3V @ 250µA 62nC @ 4.5V 5220pF @ 25V ±20V HEXFET®
IRF7701GTRPBF MOSFET P-CH 12V 10A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.5W (Ta) 12V 10A (Ta) 11mOhm @ 10A, 4.5V 1.8V, 4.5V 1.2V @ 250µA 100nC @ 4.5V 5050pF @ 10V ±8V HEXFET®
IRF7706GTRPBF MOSFET P-CH 30V 7A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.51W (Ta) 30V 7A (Ta) 22mOhm @ 7A, 10V 4.5V, 10V 2.5V @ 250µA 72nC @ 10V 2211pF @ 25V ±20V HEXFET®
IRF7704TRPBF MOSFET P-CH 40V 4.6A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.5W (Ta) 40V 4.6A (Ta) 46mOhm @ 4.6A, 10V 4.5V, 10V 3V @ 250µA 38nC @ 4.5V 3150pF @ 25V ±20V HEXFET®
IRF7702TRPBF MOSFET P-CH 12V 8A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.5W (Tc) 12V 8A (Tc) 14mOhm @ 8A, 4.5V 1.8V, 4.5V 1.2V @ 250µA 81nC @ 4.5V 3470pF @ 10V ±8V HEXFET®
IRF7756TRPBF MOSFET 2P-CH 12V 4.3A 8TSSOP Infineon Technologies 8-TSSOP 1W Surface Mount 8-TSSOP (0.173", 4.40mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 12V 4.3A Logic Level Gate 40mOhm @ 4.3A, 4.5V 900mV @ 250µA 18nC @ 4.5V 1400pF @ 10V HEXFET®
IRF7704 MOSFET P-CH 40V 4.6A 8-TSSOP Infineon Technologies 8-TSSOP Surface Mount 8-TSSOP (0.173", 4.40mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.5W (Ta) 40V 4.6A (Ta) 46mOhm @ 4.6A, 10V 4.5V, 10V 3V @ 250µA 38nC @ 4.5V 3150pF @ 25V ±20V HEXFET®
  • 10
  • 15
  • 50
  • 100