Найдено: 563
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IRF7807D1TRPBF MOSFET N-CH 30V 8.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 8.3A (Ta) Schottky Diode (Isolated) 25mOhm @ 7A, 4.5V 4.5V 1V @ 250µA 17nC @ 5V ±12V FETKY™
IRF7389TRPBF MOSFET N/P-CH 30V 8-SOIC Infineon Technologies 8-SO 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N and P-Channel 30V Logic Level Gate 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V HEXFET®
IRF7306QTRPBF MOSFET 2P-CH 30V 3.6A 8SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) 2 P-Channel (Dual) 30V 3.6A Standard 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V
IRF7422D2TR MOSFET P-CH 20V 4.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2W (Ta) 20V 4.3A (Ta) Schottky Diode (Isolated) 90mOhm @ 2.2A, 4.5V 2.7V, 4.5V 700mV @ 250µA 22nC @ 4.5V 610pF @ 15V ±12V FETKY™
IRF7820PBF MOSFET N CH 200V 3.7A 8-SO Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 200V 3.7A (Ta) 78mOhm @ 2.2A, 10V 10V 5V @ 100µA 44nC @ 10V 1750pF @ 100V ±20V HEXFET®
IRF7466TRPBF MOSFET N-CH 30V 11A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 11A (Ta) 12.5mOhm @ 11A, 10V 4.5V, 10V 3V @ 250µA 23nC @ 4.5V 2100pF @ 15V ±20V HEXFET®
IRF7326D2TR MOSFET P-CH 30V 3.6A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2W (Ta) 30V 3.6A (Ta) Schottky Diode (Isolated) 100mOhm @ 1.8A, 10V 4.5V, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V ±20V FETKY™
IRF8788TRPBF MOSFET N-CH 30V 24A 8-SO Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 24A (Ta) 2.8mOhm @ 24A, 10V 4.5V, 10V 2.35V @ 100µA 66nC @ 4.5V 5720pF @ 15V ±20V HEXFET®
IRF7406PBF MOSFET P-CH 30V 5.8A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta) 30V 5.8A (Ta) 45mOhm @ 2.8A, 10V 4.5V, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V ±20V HEXFET®
IRF7493TRPBF MOSFET N-CH 80V 9.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Tc) 80V 9.3A (Tc) 15mOhm @ 5.6A, 10V 10V 4V @ 250µA 53nC @ 10V 1510pF @ 25V ±20V HEXFET®
IRF7452TRPBF MOSFET N-CH 100V 4.5A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 100V 4.5A (Ta) 60mOhm @ 2.7A, 10V 10V 5.5V @ 250µA 50nC @ 10V 930pF @ 25V ±30V HEXFET®
AUIRF7478QTR MOSFET N-CH 60V 7A 8SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 60V 7A (Ta) 26mOhm @ 4.2A, 10V 4.5V, 10V 3V @ 250µA 31nC @ 4.5V 1740pF @ 25V ±20V HEXFET®
IRF7324D1 MOSFET P-CH 20V 2.2A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2W (Ta) 20V 2.2A (Ta) Schottky Diode (Isolated) 270mOhm @ 1.2A, 4.5V 2.7V, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V ±12V FETKY™
IRF7453TR MOSFET N-CH 250V 2.2A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 250V 2.2A (Ta) 230mOhm @ 1.3A, 10V 10V 5.5V @ 250µA 38nC @ 10V 930pF @ 25V ±30V HEXFET®
IRF7314QTRPBF MOSFET 2P-CH 20V 5.2A 8SOIC Infineon Technologies 8-SO 2.4W Surface Mount 8-SOIC (0.154", 3.90mm Width) 2 P-Channel (Dual) 20V 5.2A Logic Level Gate 58mOhm @ 5.2A, 4.5V 700mV @ 250µA 29nC @ 4.5V 913pF @ 15V