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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
|
Вид монтажа
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Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
|
Серия
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IRF7807D1TRPBF | MOSFET N-CH 30V 8.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 8.3A (Ta) | Schottky Diode (Isolated) | 25mOhm @ 7A, 4.5V | 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | FETKY™ | ||
IRF7389TRPBF | MOSFET N/P-CH 30V 8-SOIC | Infineon Technologies | 8-SO | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | Logic Level Gate | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | HEXFET® | |||||
IRF7306QTRPBF | MOSFET 2P-CH 30V 3.6A 8SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2 P-Channel (Dual) | 30V | 3.6A | Standard | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | ||||||
IRF7422D2TR | MOSFET P-CH 20V 4.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 20V | 4.3A (Ta) | Schottky Diode (Isolated) | 90mOhm @ 2.2A, 4.5V | 2.7V, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | ±12V | FETKY™ | |
IRF7820PBF | MOSFET N CH 200V 3.7A 8-SO | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 200V | 3.7A (Ta) | 78mOhm @ 2.2A, 10V | 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | ±20V | HEXFET® | ||
IRF7466TRPBF | MOSFET N-CH 30V 11A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 11A (Ta) | 12.5mOhm @ 11A, 10V | 4.5V, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | ±20V | HEXFET® | ||
IRF7326D2TR | MOSFET P-CH 30V 3.6A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 30V | 3.6A (Ta) | Schottky Diode (Isolated) | 100mOhm @ 1.8A, 10V | 4.5V, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | ±20V | FETKY™ | |
IRF8788TRPBF | MOSFET N-CH 30V 24A 8-SO | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 24A (Ta) | 2.8mOhm @ 24A, 10V | 4.5V, 10V | 2.35V @ 100µA | 66nC @ 4.5V | 5720pF @ 15V | ±20V | HEXFET® | ||
IRF7406PBF | MOSFET P-CH 30V 5.8A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta) | 30V | 5.8A (Ta) | 45mOhm @ 2.8A, 10V | 4.5V, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | ±20V | HEXFET® | ||
IRF7493TRPBF | MOSFET N-CH 80V 9.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Tc) | 80V | 9.3A (Tc) | 15mOhm @ 5.6A, 10V | 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | ±20V | HEXFET® | ||
IRF7452TRPBF | MOSFET N-CH 100V 4.5A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 100V | 4.5A (Ta) | 60mOhm @ 2.7A, 10V | 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | ±30V | HEXFET® | ||
AUIRF7478QTR | MOSFET N-CH 60V 7A 8SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 60V | 7A (Ta) | 26mOhm @ 4.2A, 10V | 4.5V, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | ±20V | HEXFET® | ||
IRF7324D1 | MOSFET P-CH 20V 2.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 20V | 2.2A (Ta) | Schottky Diode (Isolated) | 270mOhm @ 1.2A, 4.5V | 2.7V, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | ±12V | FETKY™ | |
IRF7453TR | MOSFET N-CH 250V 2.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 250V | 2.2A (Ta) | 230mOhm @ 1.3A, 10V | 10V | 5.5V @ 250µA | 38nC @ 10V | 930pF @ 25V | ±30V | HEXFET® | ||
IRF7314QTRPBF | MOSFET 2P-CH 20V 5.2A 8SOIC | Infineon Technologies | 8-SO | 2.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2 P-Channel (Dual) | 20V | 5.2A | Logic Level Gate | 58mOhm @ 5.2A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 913pF @ 15V |
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