• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 563
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IRF7807ATR MOSFET N-CH 30V 8.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 8.3A (Ta) 25mOhm @ 7A, 4.5V 4.5V 1V @ 250µA 17nC @ 5V ±12V HEXFET®
IRF7406GTRPBF MOSFET P-CH 30V 6.7A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta) 30V 5.8A (Ta) 45mOhm @ 2.8A, 10V 4.5V, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V ±20V HEXFET®
IRF7821TRPBF MOSFET N-CH 30V 13.6A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 155°C (TJ) N-Channel 2.5W (Ta) 30V 13.6A (Ta) 9.1mOhm @ 13A, 10V 4.5V, 10V 1V @ 250µA 14nC @ 4.5V 1010pF @ 15V ±20V HEXFET®
IRF7494TRPBF MOSFET N-CH 150V 5.1A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 150V 5.1A (Ta) 44mOhm @ 3.1A, 10V 10V 4V @ 250µA 53nC @ 10V 1783pF @ 25V ±20V HEXFET®
IRF7492TR MOSFET N-CH 200V 3.7A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 200V 3.7A (Ta) 79mOhm @ 2.2A, 10V 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V ±20V HEXFET®
IRF7420 MOSFET P-CH 12V 11.5A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta) 12V 11.5A (Tc) 14mOhm @ 11.5A, 4.5V 1.8V, 4.5V 900mV @ 250µA 38nC @ 4.5V 3529pF @ 10V ±8V HEXFET®
IRF7488TRPBF MOSFET N-CH 80V 6.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 80V 6.3A (Ta) 29mOhm @ 3.8A, 10V 10V 4V @ 250µA 57nC @ 10V 1680pF @ 25V ±20V HEXFET®
SI4410DY MOSFET N-CH 30V 10A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 10A (Ta) 13.5mOhm @ 10A, 10V 4.5V, 10V 1V @ 250µA 45nC @ 10V 1585pF @ 15V ±20V HEXFET®
IRF7421D1TRPBF MOSFET N-CH 30V 5.8A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2W (Ta) 30V 5.8A (Ta) Schottky Diode (Isolated) 35mOhm @ 4.1A, 10V 4.5V, 10V 1V @ 250µA 27nC @ 10V 510pF @ 25V ±20V FETKY™
IRF7490PBF MOSFET N-CH 100V 5.4A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 100V 5.4A (Ta) 39mOhm @ 3.2A, 10V 10V 4V @ 250µA 56nC @ 10V 1720pF @ 25V ±20V HEXFET®
IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 55V 4.7A Logic Level Gate 50mOhm @ 4.7A, 10V 1V @ 250µA 36nC @ 10V 740pF @ 25V HEXFET®
IRF7207PBF MOSFET P-CH 20V 5.4A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Tc) 20V 5.4A (Tc) 60mOhm @ 5.4A, 4.5V 2.7V, 4.5V 700mV @ 250µA 22nC @ 4.5V 780pF @ 15V ±12V HEXFET®
IRF9956PBF MOSFET 2N-CH 30V 3.5A 8-SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 3.5A Logic Level Gate 100mOhm @ 2.2A, 10V 1V @ 250µA 14nC @ 10V 190pF @ 15V HEXFET®
IRF7324D1TR MOSFET P-CH 20V 2.2A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2W (Ta) 20V 2.2A (Ta) Schottky Diode (Isolated) 270mOhm @ 1.2A, 4.5V 2.7V, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V ±12V FETKY™
IRF9358PBF MOSFET 2P-CH 30V 9.2A 8SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 30V 9.2A Logic Level Gate 16.3mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1740pF @ 25V HEXFET®
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