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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
|
Вид монтажа
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Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
|
Серия
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IRF7342D2PBF | MOSFET P-CH 55V 3.4A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 55V | 3.4A (Ta) | Schottky Diode (Isolated) | 105mOhm @ 3.4A, 10V | 4.5V, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | ±20V | FETKY™ | |
IRF7466 | MOSFET N-CH 30V 11A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 11A (Ta) | 12.5mOhm @ 11A, 10V | 4.5V, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | ±20V | HEXFET® | ||
IRF7466PBF | MOSFET N-CH 30V 11A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 11A (Ta) | 12.5mOhm @ 11A, 10V | 4.5V, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | ±20V | HEXFET® | ||
IRF7807VD1PBF | MOSFET N-CH 30V 8.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 8.3A (Ta) | Schottky Diode (Isolated) | 25mOhm @ 7A, 4.5V | 4.5V | 3V @ 250µA | 14nC @ 4.5V | ±20V | FETKY™ | ||
IRF5803D2TR | MOSFET P-CH 40V 3.4A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 40V | 3.4A (Ta) | Schottky Diode (Isolated) | 112mOhm @ 3.4A, 10V | 4.5V, 10V | 3V @ 250µA | 37nC @ 10V | 1110pF @ 25V | ±20V | FETKY™ | |
IRF7450TRPBF | MOSFET N-CH 200V 2.5A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 200V | 2.5A (Ta) | 170mOhm @ 1.5A, 10V | 10V | 5.5V @ 250µA | 39nC @ 10V | 940pF @ 25V | ±30V | HEXFET® | ||
IRF7105PBF | MOSFET N/P-CH 25V 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 25V | 3.5A, 2.3A | Standard | 100mOhm @ 1A, 10V | 3V @ 250µA | 27nC @ 10V | 330pF @ 15V | HEXFET® | ||||
IRF7413PBF | MOSFET N-CH 30V 13A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 13A (Ta) | 11mOhm @ 7.3A, 10V | 4.5V, 10V | 3V @ 250µA | 79nC @ 10V | 1800pF @ 25V | ±20V | HEXFET® | ||
IRF7104TRPBF | MOSFET 2P-CH 20V 2.3A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2.3A | Logic Level Gate | 250mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | HEXFET® | ||||
IRF7495PBF | MOSFET N-CH 100V 7.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 100V | 7.3A (Ta) | 22mOhm @ 4.4A, 10V | 10V | 4V @ 250µA | 51nC @ 10V | 1530pF @ 25V | ±20V | HEXFET® | ||
IRF7379 | MOSFET N/P-CH 30V 8-SOIC | Infineon Technologies | 8-SO | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 5.8A, 4.3A | Standard | 45mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | HEXFET® | ||||
IRF7102 | MOSFET 2N-CH 50V 2A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2 N-Channel (Dual) | 50V | 2A | Standard | 300mOhm @ 1.5A, 10V | 3V @ 250µA | 6.6nC @ 10V | 120pF @ 25V | HEXFET® | |||||
IRF7338PBF | MOSFET N/P-CH 12V 6.3A/3A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 12V | 6.3A, 3A | Logic Level Gate | 34mOhm @ 6A, 4.5V | 1.5V @ 250µA | 8.6nC @ 4.5V | 640pF @ 9V | HEXFET® | ||||
IRF7476TRPBF | MOSFET N-CH 12V 15A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 12V | 15A (Ta) | 8mOhm @ 15A, 4.5V | 2.8V, 4.5V | 1.9V @ 250µA | 40nC @ 4.5V | 2550pF @ 6V | ±12V | HEXFET® | ||
IRF7380QTRPBF | MOSFET 2N-CH 80V 3.6A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2 N-Channel (Dual) | 80V | 3.6A | Logic Level Gate | 73mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | 660pF @ 25V |
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