Найдено: 563
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IRF7342D2PBF MOSFET P-CH 55V 3.4A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2W (Ta) 55V 3.4A (Ta) Schottky Diode (Isolated) 105mOhm @ 3.4A, 10V 4.5V, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V ±20V FETKY™
IRF7466 MOSFET N-CH 30V 11A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 11A (Ta) 12.5mOhm @ 11A, 10V 4.5V, 10V 3V @ 250µA 23nC @ 4.5V 2100pF @ 15V ±20V HEXFET®
IRF7466PBF MOSFET N-CH 30V 11A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 11A (Ta) 12.5mOhm @ 11A, 10V 4.5V, 10V 3V @ 250µA 23nC @ 4.5V 2100pF @ 15V ±20V HEXFET®
IRF7807VD1PBF MOSFET N-CH 30V 8.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 8.3A (Ta) Schottky Diode (Isolated) 25mOhm @ 7A, 4.5V 4.5V 3V @ 250µA 14nC @ 4.5V ±20V FETKY™
IRF5803D2TR MOSFET P-CH 40V 3.4A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2W (Ta) 40V 3.4A (Ta) Schottky Diode (Isolated) 112mOhm @ 3.4A, 10V 4.5V, 10V 3V @ 250µA 37nC @ 10V 1110pF @ 25V ±20V FETKY™
IRF7450TRPBF MOSFET N-CH 200V 2.5A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 200V 2.5A (Ta) 170mOhm @ 1.5A, 10V 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V ±30V HEXFET®
IRF7105PBF MOSFET N/P-CH 25V 8-SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N and P-Channel 25V 3.5A, 2.3A Standard 100mOhm @ 1A, 10V 3V @ 250µA 27nC @ 10V 330pF @ 15V HEXFET®
IRF7413PBF MOSFET N-CH 30V 13A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 13A (Ta) 11mOhm @ 7.3A, 10V 4.5V, 10V 3V @ 250µA 79nC @ 10V 1800pF @ 25V ±20V HEXFET®
IRF7104TRPBF MOSFET 2P-CH 20V 2.3A 8-SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 2.3A Logic Level Gate 250mOhm @ 1A, 10V 3V @ 250µA 25nC @ 10V 290pF @ 15V HEXFET®
IRF7495PBF MOSFET N-CH 100V 7.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 100V 7.3A (Ta) 22mOhm @ 4.4A, 10V 10V 4V @ 250µA 51nC @ 10V 1530pF @ 25V ±20V HEXFET®
IRF7379 MOSFET N/P-CH 30V 8-SOIC Infineon Technologies 8-SO 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N and P-Channel 30V 5.8A, 4.3A Standard 45mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 520pF @ 25V HEXFET®
IRF7102 MOSFET 2N-CH 50V 2A 8-SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) 2 N-Channel (Dual) 50V 2A Standard 300mOhm @ 1.5A, 10V 3V @ 250µA 6.6nC @ 10V 120pF @ 25V HEXFET®
IRF7338PBF MOSFET N/P-CH 12V 6.3A/3A 8-SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N and P-Channel 12V 6.3A, 3A Logic Level Gate 34mOhm @ 6A, 4.5V 1.5V @ 250µA 8.6nC @ 4.5V 640pF @ 9V HEXFET®
IRF7476TRPBF MOSFET N-CH 12V 15A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 12V 15A (Ta) 8mOhm @ 15A, 4.5V 2.8V, 4.5V 1.9V @ 250µA 40nC @ 4.5V 2550pF @ 6V ±12V HEXFET®
IRF7380QTRPBF MOSFET 2N-CH 80V 3.6A 8-SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) 2 N-Channel (Dual) 80V 3.6A Logic Level Gate 73mOhm @ 2.2A, 10V 4V @ 250µA 23nC @ 10V 660pF @ 25V