-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Выходная мощность
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Усиление
|
Voltage - Test
|
Current - Test
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8S21120HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 28W | 2.17GHz | 65V | NI-780S | LDMOS | 17.6dB | 28V | 850mA | |
| MRF7S21080HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 22W | 2.11GHz ~ 2.17GHz | 65V | 10µA | NI-780S | LDMOS | 18dB | 28V | 800mA |
| MRF7S21150HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 44W | 2.11GHz ~ 2.17GHz | 65V | NI-780S | LDMOS | 17.5dB | 28V | 1.35A | |
| MRF18085BLSR3 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 85W | 1.93GHz ~ 1.99GHz | 65V | 10µA | NI-780S | N-Channel | 12.5dB | 26V | 800mA |
| MRF6S23100HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 20W | 2.3GHz ~ 2.4GHz | 68V | 10µA | NI-780S | LDMOS | 15.4dB | 28V | 1A |
| MRF6S27050HSR3 | RF S BAND, N-CHANNEL POWER MOSFE | Freescale Semiconductor | NI-780S | 7W | 2.62GHz | 68V | NI-780S | LDMOS | 16dB | 28V | 500mA | |
| MRF6S9130HSR5 | FET RF 68V 880MHZ NI-780S | Freescale Semiconductor | NI-780S | 27W | 880MHz | 68V | NI-780S | LDMOS | 19.2dB | 28V | 950mA | |
| MRF5S19100HSR5 | FET RF 65V 1.99GHZ NI-780S | Freescale Semiconductor | NI-780S | 22W | 1.93GHz ~ 1.99GHz | 65V | NI-780S | LDMOS | 13.9dB | 28V | 1A | |
| MRF7S27130HSR5 | POWER, N-CHANNEL, MOSFET | Freescale Semiconductor | NI-780S | 23W | 2.7GHz | 65V | NI-780S | LDMOS | 16.5dB | 28V | 1.5A | |
| MRF6V14300HSR5 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | NI-780S | 330W | 1.4GHz | 100V | NI-780S | LDMOS | 18dB | 50V | 150mA | |
| MRF5S21100HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 23W | 2.11GHz ~ 2.17GHz | 65V | 10µA | NI-780S | LDMOS | 13.5dB | 28V | 1.05A |
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