-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EPC2012 | GANFET TRANS 200V 3A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | N-Channel | 200V | 3A (Ta) | 100mOhm @ 3A, 5V | 5V | 2.5V @ 1mA | 1.8nC @ 5V | 145pF @ 100V | +6V, -5V | eGaN® | |
| EPC8009 | GANFET TRANS 65V 2.7A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 65V | 2.7A (Ta) | 130mOhm @ 500mA, 5V | 5V | 2.5V @ 250µA | 0.45nC @ 5V | 52pF @ 32.5V | +6V, -4V | eGaN® | |
| EPC2022 | GAN TRANS 100V 3MOHM BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 60A (Ta) | 3.2mOhm @ 25A, 5V | 5V | 2.5V @ 12mA | 1500pF @ 50V | +6V, -4V | eGaN® | ||
| EPC2106ENGRT | GAN TRANS 2N-CH 100V BUMPED DIE | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 100V | 1.7A | GaNFET (Gallium Nitride) | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | eGaN® | |||
| EPC2111 | GAN TRANS ASYMMETRICAL HALF BRID | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 30V | 16A (Ta) | GaNFET (Gallium Nitride) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | ||||
| EPC2045 | GANFET TRANS 100V BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 16A (Ta) | 7mOhm @ 16A, 5V | 5V | 2.5V @ 5mA | 6.5nC @ 5V | 685pF @ 50V | +6V, -4V | eGaN® | |
| EPC2105 | GAN TRANS ASYMMETRICAL HALF BRID | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 80V | 9.5A, 38A | GaNFET (Gallium Nitride) | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | eGaN® | |||
| EPC2102ENGRT | GANFET 2 N-CHANNEL 60V 23A DIE | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 60V | 23A (Tj) | GaNFET (Gallium Nitride) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | eGaN® | |||
| EPC2024 | GANFET NCH 40V 60A DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 40V | 60A (Ta) | 1.5mOhm @ 37A, 5V | 5V | 2.5V @ 19mA | 2100pF @ 20V | +6V, -4V | eGaN® | ||
| EPC2104 | GAN TRANS SYMMETRICAL HALF BRIDG | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 100V | 23A | GaNFET (Gallium Nitride) | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | eGaN® | |||
| EPC2110ENGRT | GAN TRANS 2N-CH 120V BUMPED DIE | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) Common Source | 120V | 3.4A | GaNFET (Gallium Nitride) | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | eGaN® | |||
| EPC2030 | GANFET NCH 40V 31A DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 40V | 31A (Ta) | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | eGaN® | |||
| EPC2036 | GANFET TRANS 100V 1A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 1.7A (Ta) | 65mOhm @ 1A, 5V | 5V | 2.5V @ 600µA | 0.91nC @ 5V | 90pF @ 50V | +6V, -4V | eGaN® | |
| EPC8002 | GANFET TRANS 65V 2.7A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 65V | 2A (Ta) | 530mOhm @ 500mA, 5V | 5V | 2.5V @ 250µA | 21pF @ 32.5V | +6V, -4V | eGaN® | ||
| EPC2103 | GAN TRANS SYMMETRICAL HALF BRIDG | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 80V | 28A | GaNFET (Gallium Nitride) | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | eGaN® |
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