• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 26
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
CMS06N10V8-HF MOSFET N-CH 100VDS 20VGS 6.8A PD Comchip Technology 8-PDFN (SPR-PAK ) (3.3x3.3) Surface Mount 8-PowerWDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.7W (Ta), 10.4W (Tc) 100V 6.8A (Tc) 105mOhm @ 6A, 10V 4.5V, 10V 2.5V @ 250µA 26.2nC @ 10V 1535pF @ 15V ±20V
CMS32P03V8-HF MOSFET P-CH -30VDS 20VGS -7.7A P Comchip Technology 8-PDFN (SPR-PAK ) (3.3x3.3) Surface Mount 8-PowerWDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.6W (Ta), 29W (Tc) 30V 7.7A (Ta), 32A (Tc) 20mOhm @ 15A, 10V 4.5V, 10V 2.5V @ 250µA 12.5nC @ 4.5V 1345pF @ 15V ±20V
CMS25NN03V8-HF MOSFET N-CH 30VDS 20VGS 25A PDFN Comchip Technology 8-PDFN (SPR-PAK ) (3.3x3.3) 1.7W (Ta), 20.8W (Tc) Surface Mount 8-PowerWDFN -55°C ~ 150°C 2 N-Channel (Dual) 30V 25A 20mOhm @ 10A, 10V 2.5V @ 250µA 7.2nC @ 4.5V 572pF @ 15V
CMS40N03V8-HF MOSFET N-CH 30VDS 20VGS 25A PDFN Comchip Technology 8-PDFN (SPR-PAK ) (3.3x3.3) Surface Mount 8-PowerWDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3.8W (Ta), 52W (Tc) 30V 25A (Ta), 40A (Tc) 4.8mOhm @ 19A, 10V 4.5V, 10V 2.2V @ 250µA 12nC @ 4.5V 1750pF @ 15V ±20V
CMSBN4612-HF MOSFET DUAL N-CH 22VDS 12VGS 2A Comchip Technology CSPB1313-4 1.4W (Ta) Surface Mount 4-SMD, No Lead 150°C 2 N-Channel (Dual) 22V 6A (Ta) Standard 36mOhm @ 3A, 4.5V 1.3V @ 250µA 7.2nC @ 10V
CMSBN6601-HF MOSFET DUAL N-CH 20VDS 12VGS 13A Comchip Technology CSPB2718-6 2W (Ta) Surface Mount 6-SMD, No Lead 150°C 2 N-Channel (Dual) 20V 13A (Ta) Standard 11.5mOhm @ 3A, 4.5V 1.3V @ 1mA 25.4nC @ 10V
CMS70N04H8-HF MOSFET N-CH 40VDS 20VGS 70A DFN5 Comchip Technology DFN5x6 (PR-PAK) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2W (Ta), 72.3W (Tc) 40V 70A (Tc) 8.5mOhm @ 20A, 10V 4.5V, 10V 2.5V @ 250µA 19.7nC @ 10V 1278pF @ 25V ±20V
CMS02P06T6-HF MOSFET P-CH -60VDS 20VGS -2.4A S Comchip Technology SOT-26 Surface Mount SOT-23-6 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.1W (Ta) 60V 2.4A (Ta) 175mOhm @ 2A, 10V 4.5V, 10V 3V @ 250µA 4.6nC @ 4.5V 531pF @ 15V ±20V
CMS35P03D-HF MOSFET P-CH -30VDS 20VGS -35A TO Comchip Technology D-PAK (TO-252) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2W (Ta), 34W (Tc) 30V 8.5A (Ta), 34A (Tc) 25mOhm @ 15A, 10V 4.5V, 10V 2.5V @ 250µA 12.5nC @ 4.5V 1345pF @ 15V ±20V
CMS45P03H8-HF MOSFET P-CH 30VDS 20VGS 150A DFN Comchip Technology DFN5x6 (PR-PAK) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2W (Ta), 45W (Tc) 30V 9.6A (Ta), 45A (Tc) 15mOhm @ 30A, 10V 4.5V, 10V 2.5V @ 250µA 22nC @ 4.5V 2215pF @ 15V ±20V
CMS06NP03Q8-HF MOSFET Comchip Technology 8-SOIC 1.5W (Ta) Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N and P-Channel 30V 6.9A (Ta), 6.3A (Ta) Standard 28mOhm @ 6A, 10V, 36mOhm @ 6A, 10V 2.5V @ 250µA
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