- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Мощность - Макс.
-
- Тип корпуса
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Серия
Наименование | Описание | Производитель
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Package / Case
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
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Тип транзистора
|
Рабочая температура
|
Тип корпуса
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Граничная частота
|
Серия
|
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BCP6925TC | TRANS PNP 20V 1A SOT223-3 | Diodes Incorporated | TO-261-4, TO-261AA | 1A | 20V | 2W | Surface Mount | PNP | -55°C ~ 150°C (TJ) | SOT-223-3 | 500mV @ 100mA, 1A | 100nA (ICBO) | 160 @ 500mA, 1V | 100MHz | |
KSA1013OTA | TRANS PNP 160V 1A TO92-3 | Fairchild Semiconductor | TO-226-3, TO-92-3 Long Body (Formed Leads) | 1A | 160V | 900mW | Through Hole | PNP | 150°C (TJ) | TO-92-3 | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 200mA, 5V | 50MHz | |
TN3019A | TRANS NPN 80V 1A TO226-3 | Fairchild Semiconductor | TO-226-3, TO-92-3 (TO-226AA) | 1A | 80V | 1W | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-226-3 | 500mV @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 100MHz | |
JANSF2N3700UB/TR | TRANS NPN 80V 1A UB | Microchip Technology | 3-LCC | 1A | 80V | 500mW | Through Hole | NPN | -65°C ~ 200°C (TJ) | UB | 500mV @ 50mA, 500mA | 10nA | 50 @ 500mA, 10V | Military, MIL-PRF-19500/391 | |
JAN2N4239 | TRANS NPN 80V 1A TO39 | Microchip Technology | TO-205AD, TO-39-3 Metal Can | 1A | 80V | 1W | Through Hole | NPN | -65°C ~ 200°C (TJ) | TO-39 (TO-205AD) | 600mV @ 100mA, 1A | 100nA (ICBO) | 30 @ 250mA, 1V | Military, MIL-PRF-19500/581 | |
JANTXV2N3700 | TRANS NPN 80V 1A | Microsemi Corporation | TO-206AA, TO-18-3 Metal Can | 1A | 80V | 500mW | Through Hole | NPN | -65°C ~ 200°C (TJ) | TO-18 (TO-206AA) | 500mV @ 50mA, 500mA | 10nA | 50 @ 500mA, 10V | Military, MIL-PRF-19500/391 | |
JANTXV2N3637 | TRANS PNP 175V 1A TO-39 | Microsemi Corporation | TO-205AD, TO-39-3 Metal Can | 1A | 175V | 1W | Through Hole | PNP | -65°C ~ 200°C (TJ) | TO-39 | 600mV @ 5mA, 50mA | 10µA | 100 @ 50mA, 10V | Military, MIL-PRF-19500/357 | |
NSS30101LT1G | TRANS NPN 30V 1A SOT23-3 | onsemi | TO-236-3, SC-59, SOT-23-3 | 1A | 30V | 310mW | Surface Mount | NPN | -55°C ~ 150°C (TJ) | SOT-23-3 (TO-236) | 200mV @ 100mA, 1A | 100nA | 300 @ 500mA, 5V | 100MHz | |
PN3568_D26Z | TRANS NPN 60V 1A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 1A | 60V | 625mW | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-92-3 | 250mV @ 15mA, 150mA | 50nA (ICBO) | 40 @ 150mA, 1V | ||
2SC43910RA | TRANS NPN 80V 1A MT-2 | Panasonic Electronic Components | 3-SIP | 1A | 80V | 1W | Through Hole | NPN | 150°C (TJ) | MT-2-A1 | 300mV @ 50mA, 500mA | 100nA (ICBO) | 120 @ 100mA, 2V | 120MHz | |
2SA202800L | TRANS PNP 20V 1A SMINI3 | Panasonic Electronic Components | SC-70, SOT-323 | 1A | 20V | 150mW | Surface Mount | PNP | 150°C (TJ) | SMini3-G1 | 100mV @ 10mA, 200mA | 160 @ 100mA, 2V | 170MHz | ||
KSB564AYBU | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 1A | 25V | 800mW | Through Hole | PNP | 150°C (TJ) | TO-92-3 | 500mV @ 100mA, 1A | 100nA (ICBO) | 120 @ 100mA, 1V | 110MHz | |
2SAR293P5T100 | TRANS PNP 30V 1A MPT3 | Rohm Semiconductor | TO-243AA | 1A | 30V | 500mW | Surface Mount | PNP | 150°C (TJ) | MPT3 | 350mV @ 25mA, 500mA | 100nA (ICBO) | 270 @ 100mA, 2V | 320MHz | |
2SA1837(LBSAN,F,M) | TRANS PNP 230V 1A TO220NIS | Toshiba Semiconductor and Storage | TO-220-3 Full Pack | 1A | 230V | 2W | Through Hole | PNP | 150°C (TJ) | TO-220NIS | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 70MHz | |
2SA1837(PAIO,F,M) | TRANS PNP 230V 1A TO220NIS | Toshiba Semiconductor and Storage | TO-220-3 Full Pack | 1A | 230V | 2W | Through Hole | PNP | 150°C (TJ) | TO-220NIS | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 70MHz |
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