- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Мощность - Макс.
-
- Тип корпуса
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Тип транзистора
|
Рабочая температура
|
Тип корпуса
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Граничная частота
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DCP68-25-13 | TRANS NPN 20V 1A SOT223-3 | Diodes Incorporated | TO-261-4, TO-261AA | 1A | 20V | 1W | Surface Mount | NPN | -55°C ~ 150°C (TJ) | SOT-223-3 | 500mV @ 100mA, 1A | 100nA (ICBO) | 160 @ 500mA, 1V | 330MHz | |
| ZTX453CW | TRANS NPN 100V 1A E-LINE | Diodes Incorporated | E-Line-3 | 1A | 100V | 1W | Through Hole | NPN | -55°C ~ 200°C (TJ) | E-Line (TO-92 compatible) | 700mV @ 15mA, 150mA | 100nA (ICBO) | 40 @ 150mA, 10V | 150MHz | |
| FMMT555TA | TRANS PNP 150V 1A SOT23-3 | Diodes Incorporated | TO-236-3, SC-59, SOT-23-3 | 1A | 150V | 500mW | Surface Mount | PNP | -55°C ~ 150°C (TJ) | SOT-23-3 | 300mV @ 10mA, 100mA | 100nA (ICBO) | 50 @ 300mA, 10V | 100MHz | |
| JANTX2N5416U4 | TRANS PNP 300V 1A U4 | Microchip Technology | 3-SMD, No Lead | 1A | 300V | 1W | Surface Mount | PNP | -65°C ~ 200°C (TJ) | U4 | 2V @ 5mA, 50mA | 1mA | 30 @ 50mA, 10V | Military, MIL-PRF-19500/485 | |
| MNS2N3637UBP/TR | TRANS PNP 175V 1A UB | Microchip Technology | 3-SMD, No Lead | 1A | 175V | 1.5W | Surface Mount | PNP | -65°C ~ 200°C (TJ) | UB | 600mV @ 5mA, 50mA | 10µA | 100 @ 50mA, 10V | Military, MIL-PRF-19500/357 | |
| JANTXV2N3636UB | TRANS PNP 175V 1A 3SMD | Microchip Technology | 3-SMD, No Lead | 1A | 175V | 1.5W | Surface Mount | PNP | -65°C ~ 200°C (TJ) | 3-SMD | 600mV @ 5mA, 50mA | 10µA | 50 @ 50mA, 10V | Military, MIL-PRF-19500/357 | |
| PBSS5112PAP,115 | TRANS 2PNP 120V 1A 6HUSON | Nexperia USA Inc. | 6-UFDFN Exposed Pad | 1A | 120V | 510mW | Surface Mount | 2 PNP (Dual) | 150°C (TJ) | 6-HUSON (2x2) | 480mV @ 100mA, 1A | 100nA (ICBO) | 50 @ 500mA, 2V | 100MHz | |
| BCP52TF | BCP52T/SOT223/SC-73 | Nexperia USA Inc. | TO-261-4, TO-261AA | 1A | 60V | 1.3W | Surface Mount | PNP | 150°C (TJ) | SOT-223 | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 140MHz | Automotive, AEC-Q101 |
| PBHV8115TLHR | TRANS NPN 150V 1A TO236AB | Nexperia USA Inc. | TO-236-3, SC-59, SOT-23-3 | 1A | 150V | Surface Mount | NPN | 150°C (TJ) | TO-236AB | 60mV @ 10mA, 100mA | 100nA | 70 @ 50mA, 10V | 30MHz | Automotive, AEC-Q101 | |
| PBSS4130QAZ | NEXPERIA PBSS4130QA - 30 V, 1 A | NXP Semiconductors | 3-XDFN Exposed Pad | 1A | 30V | 325mW | Surface Mount | NPN | 150°C (TJ) | DFN1010D-3 | 245mV @ 50mA, 1A | 100nA (ICBO) | 180 @ 1A, 2V | 190MHz | |
| MPS6726G | TRANS PNP 30V 1A TO92 | onsemi | TO-226-3, TO-92-3 Long Body | 1A | 30V | 1W | Through Hole | PNP | -55°C ~ 150°C (TJ) | TO-92 (TO-226) | 500mV @ 100mA, 1A | 100nA (ICBO) | 50 @ 1A, 1V | ||
| 2N4234 | TRANS PNP 40V 1A TO39 | onsemi | TO-205AD, TO-39-3 Metal Can | 1A | 40V | 6W | Through Hole | PNP | TO-39 | 600mV @ 125mA, 1A | 30 @ 250mA, 1V | ||||
| STX13003G-AP | TRANS NPN 400V 1A TO92AP | STMicroelectronics | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 1A | 400V | 1.5W | Through Hole | NPN | 150°C (TJ) | TO-92AP | 1.5V @ 500mA, 1.5A | 1mA | 8 @ 500mA, 2V | ||
| 2SA1837,HFEYHF(M | TRANS PNP 230V 1A TO220NIS | Toshiba Semiconductor and Storage | TO-220-3 Full Pack | 1A | 230V | 2W | Through Hole | PNP | 150°C (TJ) | TO-220NIS | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 70MHz | |
| 2SC4793,HFEF(M | TRANS NPN 230V 1A TO220NIS | Toshiba Semiconductor and Storage | TO-220-3 Full Pack | 1A | 230V | 2W | Through Hole | NPN | 150°C (TJ) | TO-220NIS | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 100MHz |
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