Найдено: 120
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Рабочая температура
Тип корпуса
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
2N5308 TRANS NPN DARL 40V 1.2A TO92-3 Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) 1.2A 40V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.4V @ 200µA, 200mA 100nA (ICBO) 7000 @ 2mA, 5V
KSC2690YSTU TRANS NPN 120V 1.2A TO126-3 Fairchild Semiconductor TO-225AA, TO-126-3 1.2A 120V 1.2W Through Hole NPN 150°C (TJ) TO-126-3 700mV @ 200mA, 1A 1µA (ICBO) 160 @ 300mA, 5V 155MHz
MMBTA64 TRANS PNP DARL 30V 1.2A SOT23 Fairchild Semiconductor TO-236-3, SC-59, SOT-23-3 1.2A 30V 350mW Surface Mount PNP - Darlington -55°C ~ 150°C (TJ) SOT-23 1.5V @ 100µA, 100mA 100nA (ICBO) 20000 @ 100mA, 5V 125MHz
MPSA64_D75Z TRANS PNP DARL 30V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 30V 625mW Through Hole PNP - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 20000 @ 100mA, 5V 125MHz
TN6707A TRANS NPN 80V 1.2A TO226-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 1.2A 80V 1W Through Hole NPN -55°C ~ 150°C (TJ) TO-226-3 1V @ 100mA, 1A 100nA (ICBO) 40 @ 250mA, 2V 50MHz
NZT6717-ON TRANS NPN 80V 1.2A SOT223-4 onsemi TO-261-4, TO-261AA 1.2A 80V 1W Surface Mount NPN -55°C ~ 150°C (TJ) SOT-223-4 350mV @ 10mA, 250mA 100nA (ICBO) 80 @ 50mA, 1V
2N6427_D26Z TRANS NPN DARL 40V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 1.2A 40V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 500µA, 500mA 1µA 14000 @ 500mA, 5V
MPSA12_D75Z TRANS NPN DARL 20V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 20V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1V @ 10µA, 10mA 100nA 20000 @ 10mA, 5V
MPSA77_D26Z TRANS PNP DARL 60V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 60V 625mW Through Hole PNP - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 10000 @ 100mA, 5V 100MHz
MPSA14_D75Z TRANS NPN DARL 30V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 30V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 20000 @ 100mA, 5V 125MHz
MPSA13_D74Z TRANS NPN DARL 30V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 30V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 10000 @ 100mA, 5V 125MHz
TN6717A TRANS NPN 80V 1.2A TO226-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 1.2A 80V 1W Through Hole NPN -55°C ~ 150°C (TJ) TO-226-3 350mV @ 10mA, 250mA 100nA (ICBO) 50 @ 250mA, 1V
MPSA77_D75Z TRANS PNP DARL 60V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 60V 625mW Through Hole PNP - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 10000 @ 100mA, 5V 100MHz
2N5308 SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 1.2A 40V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.4V @ 200µA, 200mA 100nA (ICBO) 7000 @ 2mA, 5V
MPSA13RA SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 30V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 10000 @ 100mA, 5V 125MHz