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Списком Таблицей
Найдено: 114
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
Серия
RN1902FE,LXHF(CT AUTO AEC-Q TR NPNX2 Q1BSR=10KOHM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 500nA 50 @ 10mA, 5V 250MHz 10kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN1903FE,LF(CT NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 22kOhms 300mV @ 250µA, 5mA 500nA 70 @ 10mA, 5V 250MHz 22kOhms SOT-563, SOT-666
RN2908FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666
RN2961FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 30 @ 10mA, 5V 200MHz 4.7kOhms SOT-563, SOT-666
RN1968FE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 250MHz 47kOhms SOT-563, SOT-666
RN2962FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 50 @ 10mA, 5V 200MHz 1kOhms SOT-563, SOT-666
RN2904FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN4909FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 500nA 70 @ 10mA, 5V 200MHz, 250MHz 22kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN2904FE(T5L,F,T) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666
RN4989FE,LF(CT NPN + PNP BRT Q1BSR47KOHM Q1BER2 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 500nA 70 @ 10mA, 5V 250MHz, 200MHz 22kOhms SOT-563, SOT-666
RN49A1FE(TE85L,F) PNP + NPN BRT Q1BSR=2.2KOHM Q1BE Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 2.2kOhms, 22kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz, 250MHz 47kOhms SOT-563, SOT-666
RN2901FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 500nA 30 @ 10mA, 5V 200MHz 4.7kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN4982FE,LF(CT TRANS NPN/PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 50 @ 10mA, 5V 250MHz 10kOhms SOT-563, SOT-666
RN4986FE,LF(CT TRANS NPN/PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz, 200MHz 47kOhms SOT-563, SOT-666
RN2907FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666 Automotive, AEC-Q101
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