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Списком Таблицей
Найдено: 114
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
Серия
RN4907FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz, 250MHz 47kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN2908FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 22kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN4991FE,LF(CT NPN + PNP BRT Q1BSR10KOHM Q1BERI Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 250MHz, 200MHz SOT-563, SOT-666
RN1970FE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 250MHz SOT-563, SOT-666
RN4986FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz, 200MHz 47kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN2906FE,LF(CT PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666
RN1969FE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 250MHz 22kOhms SOT-563, SOT-666
RN1904FE,LF(CT TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 250MHz 47kOhms SOT-563, SOT-666
RN1906FE,LF(CT TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms SOT-563, SOT-666
RN4910FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz, 250MHz SOT-563, SOT-666 Automotive, AEC-Q101
RN4983FE,LF(CT TRANS NPN/PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 250MHz 22kOhms SOT-563, SOT-666
RN1909FE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 250MHz 22kOhms SOT-563, SOT-666
RN4904FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz, 250MHz 47kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN4987FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz, 200MHz 47kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN2909FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 200MHz 22kOhms SOT-563, SOT-666
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