Найдено: 52
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Резистор эмиттер-база (R2)
Package / Case
RN1105CT(TPL3) TRANS PREBIAS NPN 20V 0.05A CST3 Toshiba Semiconductor and Storage 50mA 20V 50mW Surface Mount NPN - Pre-Biased CST3 2.2kOhms 150mV @ 250µA, 5mA 500nA 120 @ 10mA, 5V 47kOhms SC-101, SOT-883
RN2113ACT(TPL3) TRANS PREBIAS PNP 50V 0.08A CST3 Toshiba Semiconductor and Storage 80mA 50V 100mW Surface Mount PNP - Pre-Biased CST3 47kOhms 150mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V SC-101, SOT-883
RN2103CT(TPL3) TRANS PREBIAS PNP 20V 0.05A CST3 Toshiba Semiconductor and Storage 50mA 20V 50mW Surface Mount PNP - Pre-Biased CST3 22kOhms 150mV @ 250µA, 5mA 500nA 100 @ 10mA, 5V 22kOhms SC-101, SOT-883
RN1101CT(TPL3) TRANS PREBIAS NPN 20V 0.05A CST3 Toshiba Semiconductor and Storage 50mA 20V 50mW Surface Mount NPN - Pre-Biased CST3 4.7kOhms 150mV @ 250µA, 5mA 500nA 30 @ 10mA, 5V 4.7kOhms SC-101, SOT-883
RN2104CT(TPL3) TRANS PREBIAS PNP 20V 0.05A CST3 Toshiba Semiconductor and Storage 50mA 20V 50mW Surface Mount PNP - Pre-Biased CST3 47kOhms 150mV @ 250µA, 5mA 500nA 120 @ 10mA, 5V 47kOhms SC-101, SOT-883
RN1106CT(TPL3) TRANS PREBIAS NPN 20V 0.05A CST3 Toshiba Semiconductor and Storage 50mA 20V 50mW Surface Mount NPN - Pre-Biased CST3 4.7kOhms 150mV @ 250µA, 5mA 500nA 120 @ 10mA, 5V 47kOhms SC-101, SOT-883
RN1103ACT(TPL3) TRANS PREBIAS NPN 50V 0.08A CST3 Toshiba Semiconductor and Storage 80mA 50V 100mW Surface Mount NPN - Pre-Biased CST3 22kOhms 150mV @ 250µA, 5mA 500nA 70 @ 10mA, 5V 22kOhms SC-101, SOT-883