• Напряжение насыщения (макс) @ Ib, Ic
    • Обратный ток коллектора
    • Усиление по току (hFE)
    • Граничная частота
    • Резистор эмиттер-база (R2)
    • Package / Case
    • Серия
  • 10
  • 15
  • 50
  • 100
Списком Таблицей
Найдено: 57
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Резистор эмиттер-база (R2)
Package / Case
PDTB113ZS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 500mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 1kOhms 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTB113ES,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 500mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 1kOhms 300mV @ 2.5mA, 50mA 500nA 33 @ 50mA, 5V 1kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA124ES,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 22kOhms 150mV @ 500µA, 10mA 1µA 60 @ 5mA, 5V 22kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTC124TS,126 TRANS PREBIAS NPN 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole NPN - Pre-Biased TO-92-3 22kOhms 150mV @ 500µA, 10mA 1µA 100 @ 1mA, 5V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA123ES,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 2.2kOhms 150mV @ 500µA, 10mA 1µA 30 @ 20mA, 5V 2.2kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA124XS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 22kOhms 150mV @ 500µA, 10mA 1µA 80 @ 5mA, 5V 47kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTB123TS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 500mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 2.2kOhms 300mV @ 2.5mA, 50mA 500nA 100 @ 50mA, 5V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTC124ES,126 TRANS PREBIAS NPN 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole NPN - Pre-Biased TO-92-3 22kOhms 150mV @ 500µA, 10mA 1µA 60 @ 5mA, 5V 22kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA143XS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 4.7kOhms 150mV @ 500µA, 10mA 1µA 50 @ 10mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTC144ES,126 TRANS PREBIAS NPN 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole NPN - Pre-Biased TO-92-3 47kOhms 150mV @ 500µA, 10mA 1µA 80 @ 5mA, 5V 47kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA113ZS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 1kOhms 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRN123ES,126 TRANS PREBIAS NPN 0.7W TO92-3 NXP USA Inc. 800mA 40V 700mW Through Hole NPN - Pre-Biased TO-92-3 2.2kOhms 1.15V @ 8mA, 800mA 500nA 280 @ 300mA, 5V 2.2kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • 10
  • 15
  • 50
  • 100