• Напряжение насыщения (макс) @ Ib, Ic
    • Обратный ток коллектора
    • Усиление по току (hFE)
    • Граничная частота
    • Резистор эмиттер-база (R2)
    • Package / Case
    • Серия
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Списком Таблицей
Найдено: 57
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Резистор эмиттер-база (R2)
Package / Case
PDTA123YS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 2.2kOhms 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA143TS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 4.7kOhms 150mV @ 250µA, 5mA 1µA 200 @ 1mA, 5V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRN123YS,126 TRANS PREBIAS NPN 0.7W TO92-3 NXP USA Inc. 800mA 40V 700mW Through Hole NPN - Pre-Biased TO-92-3 2.2kOhms 1.15V @ 8mA, 800mA 500nA 500 @ 300mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTD123ES,126 TRANS PREBIAS NPN 500MW TO92-3 NXP USA Inc. 500mA 50V 500mW Through Hole NPN - Pre-Biased TO-92-3 2.2kOhms 300mV @ 2.5mA, 50mA 500nA 40 @ 50mA, 5V 2.2kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA123JS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 2.2kOhms 100mV @ 250µA, 5mA 1µA 100 @ 10mA, 5V 47kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTC123YS,126 TRANS PREBIAS NPN 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole NPN - Pre-Biased TO-92-3 2.2kOhms 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRN113ZS,126 TRANS PREBIAS NPN 0.7W TO92-3 NXP USA Inc. 800mA 40V 700mW Through Hole NPN - Pre-Biased TO-92-3 1kOhms 1.15V @ 8mA, 800mA 500nA 500 @ 300mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA143ZS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 4.7kOhms 100mV @ 250µA, 5mA 1µA 100 @ 10mA, 5V 47kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA114ES,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 10kOhms 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRP113ES,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 800mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 1kOhms 1kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTA144WS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 47kOhms 150mV @ 500µA, 10mA 1µA 60 @ 5mA, 5V 22kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTC114ES,126 TRANS PREBIAS NPN 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole NPN - Pre-Biased TO-92-3 10kOhms 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTC143ZS,126 TRANS PREBIAS NPN 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole NPN - Pre-Biased TO-92-3 4.7kOhms 100mV @ 250µA, 5mA 1µA 100 @ 10mA, 5V 47kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTC114YS,126 TRANS PREBIAS NPN 500MW TO92-3 NXP USA Inc. 100mA 50V 500mW Through Hole NPN - Pre-Biased TO-92-3 10kOhms 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 47kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PDTD113ES,126 TRANS PREBIAS NPN 500MW TO92-3 NXP USA Inc. 500mA 50V 500mW Through Hole NPN - Pre-Biased TO-92-3 1kOhms 300mV @ 2.5mA, 50mA 500nA 33 @ 50mA, 5V 1kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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