Найдено: 23
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
Серия
PEMH17,115 NOW NEXPERIA PEMH17 - SMALL SIGN NXP USA Inc. 100mA 50V 300mW Surface Mount 2 NPN - Pre-Biased (Dual) SOT-666 47kOhms 150mV @ 500µA, 10mA 1µA 60 @ 5mA, 5V 22kOhms SOT-563, SOT-666
PEMD20,115 NOW NEXPERIA PEMD20 - SMALL SIGN NXP USA Inc. 100mA 50V 300mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) SOT-666 2.2kOhms 150mV @ 500µA, 10mA 1µA 30 @ 20mA, 5V 2.2kOhms SOT-563, SOT-666
PEMH11,315 NOW NEXPERIA PEMH11 - SMALL SIGN NXP USA Inc. 100mA 50V 300mW Surface Mount 2 NPN - Pre-Biased (Dual) SOT-666 10kOhms 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 10kOhms SOT-563, SOT-666
PEMB15,115 NOW NEXPERIA PEMB15 - SMALL SIGN NXP USA Inc. 100mA 50V 300mW Surface Mount 2 PNP - Pre-Biased (Dual) SOT-666 4.7kOhms 150mV @ 500µA, 10mA 1µA 30 @ 10mA, 5V 4.7kOhms SOT-563, SOT-666
PBLS4001V,115 TRANS NPN PREBIAS/PNP SOT666 NXP USA Inc. 100mA, 500mA 50V, 40V 300mW Surface Mount 1 NPN Pre-Biased, 1 PNP SOT-666 2.2kOhms 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA 1µA 30 @ 20mA, 5V / 150 @ 100mA, 2V 300MHz 2.2kOhms SOT-563, SOT-666
PEMB20,115 TRANSISTORS>100MHZ NXP USA Inc. 100mA 50V 300mW Surface Mount 2 PNP - Pre-Biased (Dual) SOT-666 2.2kOhms 150mV @ 500µA, 10mA 1µA 30 @ 20mA, 5V 2.2kOhms SOT-563, SOT-666
PEMD14,115 NOW NEXPERIA PEMD14 - SMALL SIGN NXP USA Inc. 100mA 50V 300mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) SOT-666 47kOhms 150mV @ 500µA, 10mA 1µA 100 @ 1mA, 5V SOT-563, SOT-666
PEMD48,115 NOW NEXPERIA PEMD48 - SMALL SIGN NXP USA Inc. 100mA 50V 300mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) SOT-666 4.7kOhms, 22kOhms 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA 1µA 80 @ 5mA, 5V / 100 @ 10mA, 5V 47kOhms SOT-563, SOT-666