Микросхемы памяти объем 128Mb (4M x 32) | Интегральные микросхемы

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Наименование	Описание	Производитель	Вид монтажа	Формат памяти	Тактовая частота	Тип памяти	Объем памяти	Напряжение питания	Технология	Рабочая температура	Тип корпуса	Package / Case	Время доступа	Интерфейс	Время цикла записи - слово, страница
NDS73PT9-16ET	IC SDRAM 128MBIT 166MHZ 86TSOP	Insignis Technology Corporation	Surface Mount	DRAM	166MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	0°C ~ 70°C (TA)	86-TSOP II	86-TFSOP (0.400", 10.16mm Width)		Parallel
IS42S32400F-7TL-TR	IC DRAM 128MBIT PAR 86TSOP II	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	143MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	0°C ~ 70°C (TA)	86-TSOP II	86-TFSOP (0.400", 10.16mm Width)	5.4ns	Parallel
IS43LR32400F-6BLI	IC DRAM 128MBIT PARALLEL 90TFBGA	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	166MHz	Volatile	128Mb (4M x 32)	1.7V ~ 1.95V	SDRAM - Mobile LPDDR	-40°C ~ 85°C (TA)	90-TFBGA (8x13)	90-TFBGA	5.5ns	Parallel	15ns
IS42S32400E-6TLI	IC DRAM 128MBIT PAR 86TSOP II	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	166MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	-40°C ~ 85°C (TA)	86-TSOP II	86-TFSOP (0.400", 10.16mm Width)	5.4ns	Parallel
IS42S32400D-6B	IC DRAM 128MBIT PARALLEL 90TFBGA	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	166MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	0°C ~ 70°C (TA)	90-TFBGA (8x13)	90-TFBGA	5.4ns	Parallel
MT48LC4M32B2B5-7 IT:G TR	IC DRAM 128MBIT PARALLEL 90VFBGA	Micron Technology Inc.	Surface Mount	DRAM	143MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	-40°C ~ 85°C (TA)	90-VFBGA (8x13)	90-VFBGA	5.5ns	Parallel	14ns
MT48LC4M32B2P-6 IT:G	IC DRAM 128MBIT PAR 86TSOP II	Micron Technology Inc.	Surface Mount	DRAM	167MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	-40°C ~ 85°C (TA)	86-TSOP II	86-TFSOP (0.400", 10.16mm Width)	5.5ns	Parallel	12ns
MT48LC4M32B2P-6:G TR	IC DRAM 128MBIT PAR 86TSOP II	Micron Technology Inc.	Surface Mount	DRAM	167MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	0°C ~ 70°C (TA)	86-TSOP II	86-TFSOP (0.400", 10.16mm Width)	5.5ns	Parallel	12ns
MT48LC4M32B2B5-6A IT:L TR	IC DRAM 128MBIT PARALLEL 90VFBGA	Micron Technology Inc.	Surface Mount	DRAM	167MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	-40°C ~ 85°C (TA)	90-VFBGA (8x13)	90-VFBGA	5.4ns	Parallel	12ns
MT48LC4M32B2P-7:G	IC DRAM 128MBIT PAR 86TSOP II	Micron Technology Inc.	Surface Mount	DRAM	143MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	0°C ~ 70°C (TA)	86-TSOP II	86-TFSOP (0.400", 10.16mm Width)	5.5ns	Parallel	14ns
MT48LC4M32LFF5-8:G	IC DRAM 128MBIT PARALLEL 90VFBGA	Micron Technology Inc.	Surface Mount	DRAM	125MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM - Mobile LPSDR	0°C ~ 70°C (TA)	90-VFBGA (8x13)	90-VFBGA	7ns	Parallel	15ns
MT48LC4M32B2P-7 IT:G	IC DRAM 128MBIT PAR 86TSOP II	Micron Technology Inc.	Surface Mount	DRAM	143MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM	-40°C ~ 85°C (TA)	86-TSOP II	86-TFSOP (0.400", 10.16mm Width)	5.5ns	Parallel	14ns
MT48LC4M32LFF5-8:G TR	IC DRAM 128MBIT PARALLEL 90VFBGA	Micron Technology Inc.	Surface Mount	DRAM	125MHz	Volatile	128Mb (4M x 32)	3V ~ 3.6V	SDRAM - Mobile LPSDR	0°C ~ 70°C (TA)	90-VFBGA (8x13)	90-VFBGA	7ns	Parallel	15ns
W987D2HBJX6I TR	IC DRAM 128MBIT PARALLEL 90VFBGA	Winbond Electronics	Surface Mount	DRAM	166MHz	Volatile	128Mb (4M x 32)	1.7V ~ 1.95V	SDRAM - Mobile LPSDR	-40°C ~ 85°C (TA)	90-VFBGA (8x13)	90-TFBGA	5.4ns	Parallel	15ns
W987D2HBJX6E TR	IC DRAM 128MBIT PARALLEL 90VFBGA	Winbond Electronics	Surface Mount	DRAM	166MHz	Volatile	128Mb (4M x 32)	1.7V ~ 1.95V	SDRAM - Mobile LPSDR	-25°C ~ 85°C (TC)	90-VFBGA (8x13)	90-TFBGA	5.4ns	Parallel	15ns

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