- Тактовая частота
- Формат памяти
- Тип памяти
- Объем памяти
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- Рабочая температура
- Тип корпуса
- Package / Case
- Время доступа
- Интерфейс
- Время цикла записи - слово, страница
- Серия
Наименование | Описание | Производитель
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Вид монтажа
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Формат памяти
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Тактовая частота
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Тип памяти
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Объем памяти
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Напряжение питания
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Технология
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Рабочая температура
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Тип корпуса
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Package / Case
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Интерфейс
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MT29GZ5A5BPGGA-53ITES.87J | IC FLASH RAM 4G PAR 149WFBGA | Micron Technology Inc. | Surface Mount | FLASH, RAM | 1866MHz | Non-Volatile | 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4) | 1.8V | FLASH - NAND, DRAM - LPDDR4 | -40°C ~ 85°C (TA) | 149-WFBGA (8x9.5) | 149-WFBGA | Parallel |
MT53B1536M32D8QD-053 WT:D | IC DRAM 6G 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1866MHz | Volatile | 6Gb (1.5G x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | ||||
MT29GZ5A5BPGGA-53IT.87J | IC FLASH RAM 4G PAR 149WFBGA | Micron Technology Inc. | Surface Mount | FLASH, RAM | 1866MHz | Non-Volatile | 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4) | 1.8V | FLASH - NAND, DRAM - LPDDR4 | -40°C ~ 85°C (TA) | 149-WFBGA (8x9.5) | 149-WFBGA | Parallel |
MT53B512M64D4PV-053 WT ES:C | IC DRAM 32G 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1866MHz | Volatile | 32Gb (512M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | ||||
MT53D512M64D8TZ-053 WT ES:B | IC DRAM 32G 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1866MHz | Volatile | 32Gb (512M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | ||||
MT53B512M64D4PV-053 WT ES:C TR | IC DRAM 32G 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1866MHz | Volatile | 32Gb (512M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | ||||
MT53D768M32D4BD-053 WT ES:C | IC DRAM 24G 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1866MHz | Volatile | 24Gb (768M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | ||||
MT53D512M64D4CR-053 WT:D | IC DRAM 32G 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1866MHz | Volatile | 32Gb (512M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | ||||
MT53D512M64D4NW-053 WT:D | IC DRAM 32G 1866MHZ | Micron Technology Inc. | Surface Mount | DRAM | 1866MHz | Volatile | 32Gb (512M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 432-VFBGA (15x15) | 432-VFBGA | |
MT53D384M32D2DS-053 AAT ES:C TR | IC DRAM 12G 1866MHZ | Micron Technology Inc. | Surface Mount | DRAM | 1866MHz | Volatile | 12Gb (384M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -40°C ~ 105°C (TA) | 200-WFBGA (10x14.5) | 200-WFBGA | |
MT53D384M32D2DS-053 AUT:C TR | IC DRAM 12G 1866MHZ | Micron Technology Inc. | Surface Mount | DRAM | 1866MHz | Volatile | 12Gb (384M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -40°C ~ 95°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | |
MT53D1024M32D4DT-053 WT ES:D | IC DRAM 32G 1866MHZ FBGA | Micron Technology Inc. | Surface Mount | DRAM | 1866MHz | Volatile | 32Gb (1G x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 200-VFBGA (10x14.5) | 200-VFBGA | |
MT53D1024M32D4DT-053 AIT ES:D | IC DRAM 32G 1866MHZ FBGA | Micron Technology Inc. | Surface Mount | DRAM | 1866MHz | Volatile | 32Gb (1G x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -40°C ~ 95°C (TC) | 200-VFBGA (10x14.5) | 200-VFBGA | |
MT53D1024M64D8WF-053 WT ES:D | IC DRAM 64G 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1866MHz | Volatile | 64Gb (1G x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | ||||
MT53D384M32D2DS-053 WT:C | IC DRAM 12G 1866MHZ | Micron Technology Inc. | Surface Mount | DRAM | 1866MHz | Volatile | 12Gb (384M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA |
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