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Списком Таблицей
Найдено: 961
Наименование Описание Производитель
Вид монтажа
Формат памяти
Тактовая частота
Тип памяти
Объем памяти
Напряжение питания
Технология
Рабочая температура
Тип корпуса
Package / Case
Время доступа
Интерфейс
Время цикла записи - слово, страница
Серия
MT48LC4M16A2B4-6A IT:J TR IC DRAM 64MBIT PARALLEL 54VFBGA Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 64Mb (4M x 16) 3V ~ 3.6V SDRAM -40°C ~ 85°C (TA) 54-VFBGA (8x8) 54-VFBGA 5.4ns Parallel 12ns
MT48LC16M16A2P-6A XIT:G IC DRAM 256MBIT PAR 54TSOP II Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 256Mb (16M x 16) 3V ~ 3.6V SDRAM -40°C ~ 85°C (TA) 54-TSOP II 54-TSOP (0.400", 10.16mm Width) 5.4ns Parallel 12ns
MT48LC4M16A2P-6:G IC DRAM 64MBIT PAR 54TSOP II Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 64Mb (4M x 16) 3V ~ 3.6V SDRAM 0°C ~ 70°C (TA) 54-TSOP II 54-TSOP (0.400", 10.16mm Width) 5.5ns Parallel 12ns
MT48LC32M8A2P-6A:G TR IC DRAM 256MBIT PAR 54TSOP II Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 256Mb (32M x 8) 3V ~ 3.6V SDRAM 0°C ~ 70°C (TA) 54-TSOP II 54-TSOP (0.400", 10.16mm Width) 5.4ns Parallel 12ns
MT48LC8M16A2P-6A AIT:L TR IC DRAM 128MBIT PAR 54TSOP II Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 128Mb (8M x 16) 3V ~ 3.6V SDRAM -40°C ~ 85°C (TA) 54-TSOP II 54-TSOP (0.400", 10.16mm Width) 5.4ns Parallel 12ns Automotive, AEC-Q100
MT46V64M16P-6T IT:A TR IC DRAM 1GBIT PARALLEL 66TSOP Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 1Gb (64M x 16) 2.3V ~ 2.7V SDRAM - DDR -40°C ~ 85°C (TA) 66-TSOP 66-TSSOP (0.400", 10.16mm Width) 700ps Parallel 15ns
MT29F256G08AMCBBK7-6:B TR IC FLASH 256G PARALLEL 167MHZ Micron Technology Inc. FLASH 167MHz Non-Volatile 256Gb (32G x 8) 2.7V ~ 3.6V FLASH - NAND 0°C ~ 70°C (TA) Parallel
MT48LC16M8A2BB-6A AAT:L TR IC DRAM 128MBIT PARALLEL 60FBGA Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 128Mb (16M x 8) 3V ~ 3.6V SDRAM -40°C ~ 105°C (TA) 60-FBGA (8x16) 60-TFBGA 5.4ns Parallel 12ns Automotive, AEC-Q100
MT48LC4M16A2P-6A AIT:J TR IC DRAM 64MBIT PAR 54TSOP II Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 64Mb (4M x 16) 3V ~ 3.6V SDRAM -40°C ~ 85°C (TA) 54-TSOP II 54-TSOP (0.400", 10.16mm Width) 5.4ns Parallel 12ns Automotive, AEC-Q100
MT48LC4M32B2P-6A:L TR IC DRAM 128MBIT PAR 86TSOP II Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 128Mb (4M x 32) 3V ~ 3.6V SDRAM 0°C ~ 70°C (TA) 86-TSOP II 86-TFSOP (0.400", 10.16mm Width) 5.4ns Parallel 12ns
MT29F128G08AMCDBJ5-6IT:D IC FLASH 128GBIT PAR 132TBGA Micron Technology Inc. Surface Mount FLASH 167MHz Non-Volatile 128Gb (16G x 8) 2.7V ~ 3.6V FLASH - NAND -40°C ~ 85°C (TA) 132-TBGA (12x18) Parallel
MT48LC64M4A2P-6A:G IC DRAM 256MBIT PAR 54TSOP II Micron Technology Inc. Surface Mount DRAM 167MHz Volatile 256Mb (64M x 4) 3V ~ 3.6V SDRAM 0°C ~ 70°C (TA) 54-TSOP II 54-TSOP (0.400", 10.16mm Width) 5.4ns Parallel 12ns
MT29F128G08AECBBH6-6IT:B IC FLSH 128GBIT PARALLEL 152VBGA Micron Technology Inc. Surface Mount FLASH 167MHz Non-Volatile 128Gb (16G x 8) 2.7V ~ 3.6V FLASH - NAND -40°C ~ 85°C (TA) 152-VBGA (14x18) 152-VBGA Parallel
CY7C1315TV18-167BZC IC SRAM 18MBIT 167MHZ 165FBGA Rochester Electronics, LLC Surface Mount SRAM 167MHz Volatile 18Mb (512K x 36) 1.7V ~ 1.9V SRAM - Synchronous, QDR II+ 0°C ~ 70°C (TA) 165-FBGA (13x15) 165-LBGA Parallel
CYD18S18V18-167BBAXC CYD18S18 - FULLFLEX SYNCHRONOUS Rochester Electronics, LLC Surface Mount SRAM 167MHz Volatile 18Mb (1M x 18) 1.7V ~ 1.9V SRAM - Dual Port, Asynchronous, Standard 0°C ~ 70°C (TA) 256-FBGA (17x17) 256-LBGA 4ns Parallel
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