- Тактовая частота
- Формат памяти
- Тип памяти
- Объем памяти
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- Рабочая температура
- Тип корпуса
- Package / Case
- Время доступа
- Интерфейс
- Время цикла записи - слово, страница
- Серия
Наименование | Описание | Производитель
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Вид монтажа
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Формат памяти
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Тактовая частота
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Тип памяти
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Объем памяти
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Напряжение питания
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Технология
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Рабочая температура
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Тип корпуса
|
Package / Case
|
Время доступа
|
Интерфейс
|
Время цикла записи - слово, страница
|
Серия
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MT53D512M64D4BP-046 WT ES:E | IC DRAM 32GBIT 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1.866GHz | Volatile | 32Gb (512M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | |||||||
MT53E512M64D4NK-053 WT:D TR | IC DRAM LPDDR4 FBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 32Gb (512M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 366-WFBGA (15x15) | 366-WFBGA | ||||
MT53E128M32D2DS-053 AAT:A | IC LPDDR4 4G 128MX32 200WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 4Gb (128M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -40°C ~ 105°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | Automotive, AEC-Q100 | |||
MT53E256M32D2DS-053 WT:B TR | IC DRAM 8GBIT 1.866GHZ 200WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 8Gb (256M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | ||||
MT53D384M32D2DS-053 AAT ES:E TR | IC SDRAM LPDDR4 12GBIT 384MX32 F | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 12Gb (384M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -40°C ~ 105°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | Automotive, AEC-Q100 | |||
MT53E256M32D2DS-053 AIT:B | IC DRAM 8GBIT 1.866GHZ 200WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 8Gb (256M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -40°C ~ 95°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | Automotive, AEC-Q100 | |||
MT53E256M32D2DS-053 AAT:B TR | IC DRAM 8GBIT 1.866GHZ 200WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 8Gb (256M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -40°C ~ 105°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | Automotive, AEC-Q100 | |||
MT53D1G64D8NW-053 WT ES:E TR | LPDDR4 64G 1GX64 FBGA 8DP | Micron Technology Inc. | DRAM | 1.866GHz | Volatile | 64Gb (1G x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | |||||||
MT53B384M64D4TZ-053 WT ES:C TR | IC DRAM 24GBIT 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1.866GHz | Volatile | 24Gb (384M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | |||||||
MT53D1024M32D4NQ-053 WT ES:D | IC DRAM 32GBIT 1866MHZ 200VFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 32Gb (1G x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 200-VFBGA (10x14.5) | 200-VFBGA | ||||
MT53B768M64D8NK-053 WT ES:D | IC DRAM 48GBIT 1866MHZ 366WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 48Gb (768M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 366-WFBGA (15x15) | 366-WFBGA | ||||
MT53B384M64D4TX-053 WT:B TR | IC DRAM 24GBIT 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1.866GHz | Volatile | 24Gb (384M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | |||||||
MT53D512M64D4NW-053 WT ES:E | IC DRAM 32GBIT 1866MHZ 432VFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 32Gb (512M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 432-VFBGA (15x15) | 432-VFBGA | ||||
MT53D512M32D2NP-053 WT:D TR | IC DRAM 16GBIT 1866MHZ 200WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 16Gb (512M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | ||||
W66BL6NBUAGJ TR | 2GB LPDDR4, X16, 1866MHZ, -40C~1 | Winbond Electronics | Surface Mount | DRAM | 1.866GHz | Volatile | 2Gb (128M x 16) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | SDRAM - Mobile LPDDR4 | -40°C ~ 105°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | 3.5ns | LVSTL_11 | 18ns |
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